Display device

ABSTRACT

A display device includes a driver circuit including a logic circuit including a first transistor which is a depletion type transistor and a second transistor which is an enhancement type transistor; a signal line which is electrically connected to the driver circuit; a pixel portion including a pixel whose display state is controlled by input of a signal including image data from the driver circuit through the signal line; a reference voltage line to which reference voltage is applied; and a third transistor which is a depletion type transistor and controls electrical connection between the signal line and the reference voltage line. The first to the third transistors each include an oxide semiconductor layer including a channel formation region.

TECHNICAL FIELD

The present invention relates to a display device including a transistorincluding an oxide semiconductor.

BACKGROUND ART

As typically seen in a liquid crystal display device, a thin filmtransistor (TFT) formed over a flat plate such as a glass substrate isgenerally manufactured using a semiconductor material such as amorphoussilicon or polycrystalline silicon. TFTs manufactured using amorphoussilicon have low field-effect mobility, but can be formed over a largeglass substrate. On the other hand, TFTs manufactured using crystallinesilicon have high field-effect mobility, but due to the necessity of acrystallization step such as laser annealing, the transistors are notalways suitable for being formed over a large glass substrate.

In view of the foregoing, attention has been drawn to a technique bywhich a TFT is manufactured using an oxide semiconductor as asemiconductor material and applied to an electronic appliance or anoptical device. For example, Patent Document 1 and Patent Document 2disclose a technique by which a TFT is manufactured using zinc oxide oran In—Ga—Zn—O-based oxide semiconductor as a semiconductor material andused as a switching element or the like of an image display device.

The field-effect mobility of a TFT in which a channel formation regionis formed in an oxide semiconductor is higher than that of a TFT usingamorphous silicon. An oxide semiconductor film can be formed at atemperature of 300° C. or lower by a sputtering method or the like, andthe manufacturing process of the TFT including an oxide semiconductor issimpler than that of the TFT using polycrystalline silicon.

TFTs which are formed using such an oxide semiconductor over a glasssubstrate, a plastic substrate, or the like are expected to be appliedto display devices such as a liquid crystal display, anelectroluminescent display (also referred to as an EL display), and anelectronic paper.

In the case where the TFTs including an oxide semiconductor are appliedto a display device, the TFTs can be applied to, for example, TFTsincluded in a pixel portion or TFTs included in a driver circuit. Adriver circuit of a display device includes, for example, a shiftregister circuit or a buffer circuit, and the shift register circuit andthe buffer circuit include a logic circuit. Therefore, by using a TFTincluding an oxide semiconductor as a TFT in the logic circuit, thedriving speed of the driver circuit can be improved.

In the above display device, there is a problem in that unwanted chargebuild-up is caused in elements, electrodes, or wirings duringmanufacture or operation. In the case of a transistor, for example, suchcharge build-up will generate a parasitic channel which allows leakagecurrent to flow. Further, in the case of a bottom gate transistor,charge may build up on a surface of or in a back channel portion in asemiconductor layer (i.e., a region of a semiconductor layer which issandwiched between a source electrode and a drain electrode which areformed over the semiconductor layer) and generate a parasitic channel,in some cases. In addition, an oxide semiconductor has a relatively wideband gap as a semiconductor; accordingly, when an oxide semiconductor isused for a channel formation layer of a transistor, the transistor hashigh off resistance. Consequently, in the transistor whose channelformation layer includes an oxide semiconductor, unwanted chargebuild-up is likely to occur, and thus a parasitic channel is likely tobe generated and leakage current is likely to flow. Accordingly, inorder to realize desired operation of a driver circuit and a pixelportion, unwanted charge build-up, which is a cause of a parasiticchannel, is preferably small.

[Reference]

[Patent Document 1] Japanese Published Patent Application No.2007-123861

[Patent Document 2] Japanese Published Patent Application No. 2007-96055

DISCLOSURE OF INVENTION

An object of one embodiment of the present invention is to reduceunwanted charge build-up.

One embodiment of the present invention is a display device whichincludes a driver circuit, a pixel portion including a pixelelectrically connected to the driver circuit through a signal line, anda switching element which is selectively turned on for dischargingunwanted charge if charge builds up in the signal line or an element,electrode, or wiring which is electrically connected to the signal line.Thus, unwanted charge-build up is reduced, whereby leakage current canbe reduced.

One embodiment of the present invention is a display device whichincludes a driver circuit including a logic circuit including a firsttransistor which is a depletion type transistor and a second transistorwhich is an enhancement type transistor; a signal line; a pixel portionincluding a pixel whose display state is controlled by input of a signalincluding image data from the driver circuit through the signal line;and a third transistor which is a depletion type transistor and includesa gate, a source, and a drain. In the third transistor, one of thesource and the drain is supplied with a reference voltage, the other ofthe source and the drain is electrically connected to the signal line,and a gate signal is input to the gate. The first to third transistorseach include an oxide semiconductor layer including a channel formationregion.

In one embodiment of the present invention, the first to thirdtransistors may each include a gate electrode, a gate insulating layerover the gate electrode, a first conductive layer and a secondconductive layer over parts of the oxide semiconductor layer over thegate insulating layer, the first conductive layer and the secondconductive layer each serving as the source electrode or the drainelectrode, and an oxide insulating layer over the oxide semiconductorlayer, the first conductive layer, and the second conductive layer.

In one embodiment of the present invention, the thickness of the oxidesemiconductor layer in the first transistor may be larger than thethickness of the oxide semiconductor layer in the second transistor, andthe thickness of the oxide semiconductor layer in the third transistormay be larger than the thickness of the oxide semiconductor layer in thesecond transistor.

In one embodiment of the present invention, a conductive layer may beprovided over the channel formation region with the oxide insulatinglayer interposed between the conductive layer and the channel formationregion.

According to one embodiment of the present invention, if unwanted chargebuild-up occurs, it is possible to discharge the charge outside. Thus,unwanted charge build-up can be reduced.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 illustrates an example of a structure of a display deviceaccording to Embodiment 1.

FIGS. 2A and 2B illustrate an example of a structure of a display deviceaccording to Embodiment 2.

FIG. 3 illustrates an equivalent circuit of the display device in FIGS.2A and 2B.

FIG. 4 illustrates an example of a structure of a display deviceaccording to Embodiment 2.

FIGS. 5A to 5C are cross-sectional views illustrating an example of amanufacturing method of the display device in FIGS. 2A and 2B

FIGS. 6A and 6B are cross-sectional views illustrating an example of amanufacturing method of the display device in FIGS. 2A and 2B.

FIGS. 7A and 7B illustrate an example of a structure of a display deviceaccording to Embodiment 2.

FIG. 8 illustrates an example of a structure of a display deviceaccording to Embodiment 2.

FIGS. 9A to 9C are cross-sectional views illustrating an example of amanufacturing method of the display device in FIGS. 7A and 7B.

FIG. 10 is a circuit diagram illustrating an example of a circuitstructure of a logic circuit according to Embodiment 3.

FIG. 11 is a timing diagram illustrating an example of operation of thelogic circuit illustrated in FIG. 10.

FIG. 12 is a circuit diagram illustrating an example of a circuitstructure of a shift register according to Embodiment 4.

FIG. 13 is a circuit diagram illustrating a circuit structure of a NANDcircuit according to Embodiment 4.

FIG. 14 is a timing diagram illustrating an example of operation of theshift register illustrated in FIG. 12.

FIG. 15 is a block diagram illustrating a structure of a display deviceaccording to Embodiment 6.

FIGS. 16A and 16B are block diagrams illustrating a structure of adriver circuit in a display device according to Embodiment 6.

FIG. 17 is a circuit diagram illustrating a circuit structure of a pixelin a display device according to Embodiment 7.

FIGS. 18A and 18B illustrate a structure of a pixel in a display deviceaccording to Embodiment 7.

FIGS. 19A1 to 19B2 each illustrate a structure of a pixel in a displaydevice according to Embodiment 7.

FIG. 20 is a circuit diagram illustrating a circuit structure of a pixelin a display device according to Embodiment 8.

FIGS. 21A to 21C are cross-sectional views illustrating a structure of apixel in a display device according to Embodiment 8.

FIGS. 22A and 22B are a top view and a cross-sectional view illustratinga structure of a display device according to Embodiment 8.

FIG. 23 is a cross-sectional view illustrating a structure of anelectronic paper according to Embodiment 9.

FIG. 24 illustrates an electronic device to which an electronic paperaccording to Embodiment 9 is applied.

FIGS. 25A1 to 25B are top views and a cross-sectional view illustratinga structure of a display device according to Embodiment 10.

FIGS. 26A and 26B each illustrate an electronic device according toEmbodiment 11.

FIGS. 27A and 27B each illustrate an electronic device according toEmbodiment 11.

FIGS. 28A and 28B each illustrate an electronic device according toEmbodiment 11.

FIGS. 29A and 29B illustrate an example of a structure of a displaydevice according to Embodiment 12.

FIGS. 30A and 30B illustrate an example of a structure of a displaydevice according to Embodiment 13.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention are described belowwith reference to the drawings. Note that the present invention is notlimited to the following description and it will be readily appreciatedby those skilled in the art that modes and details can be modified invarious ways without departing from the spirit and the scope of thepresent invention. Accordingly, the present invention should not beconstrued as being limited to the description of the embodiments to begiven below.

Embodiment 1

In this embodiment, a display device which is one embodiment of thepresent invention will be described.

An example of a structure of the display device in this embodiment willbe described with reference to FIG. 1. FIG. 1 illustrates an example ofa structure of the display device in this embodiment.

The display device in FIG. 1 includes a driver circuit portion 101 and apixel portion 102. In addition, the display device includes a signalline 103.

The driver circuit portion 101 includes a driver circuit 111 and atransistor 112.

The driver circuit 111 is a circuit which controls display operation ofthe display device and includes, for example, a combinational logiccircuit. Examples of a combinational logic circuit include an inverter,which includes a depletion type transistor and an enhancement typetransistor, for example.

Note that a depletion type transistor is a transistor which has anegative threshold voltage in the case where the transistor is ann-channel transistor and has a positive threshold voltage in the casewhere the transistor is a p-channel transistor, whereas an enhancementtype transistor is a transistor which has a positive threshold voltagein the case where the transistor is an n-channel transistor and has anegative threshold voltage in the case where the transistor is ap-channel transistor.

The transistor 112 is a depletion type transistor and has a gate, asource, and a drain.

The gate refers to part of a gate electrode and gate wiring or to theentire part of gate electrode and gate wiring. The gate wiring is awiring for electrically connecting a gate electrode of at least onetransistor to another electrode or another wiring. For example, a scanline in a display device is included in a gate wiring.

The source refers to part of a source region, a source electrode, and asource wiring or to the entire part thereof. The source region is aregion in a semiconductor layer in which the resistivity is equal to orless than a given value. The source electrode is part of a conductivelayer which is connected to the source region. The source wiring is awiring for electrically connecting a source electrode of at least onetransistor to another electrode or another wiring. For example, if asignal line in a display device is electrically connected to a sourceelectrode, the signal line is also included in a source wiring.

The drain refers to part of a drain region, a drain electrode, and adrain wiring or to the entire part thereof. The drain region is a regionin a semiconductor layer in which the resistivity is equal to or lessthan a given value. The drain electrode is part of a conductive layerwhich is connected to the drain region. The drain wiring is a wiring forelectrically connecting a drain electrode of at least one transistor toanother electrode or another wiring. For example, if a signal line in adisplay device is electrically connected to a drain electrode, thesignal line is also a drain wiring.

In this document (the specification, the claims, the drawings, and thelike), since the source and the drain of the transistor may interchangedepending on the structure, the operating condition, and the like of thetransistor, it is difficult to define which is a source or a drain.Therefore, in this document (the specification, the claims, thedrawings, and the like), one terminal selected from a source and a drainis called one of the source and drain, while the other terminal iscalled the other of the source and drain.

Note that in general, a voltage refers to a difference betweenpotentials of two points (also referred to as a potential difference).However, both the value of a voltage and the value of a potential arerepresented by volts (V) and therefore it is difficult to distinguishthem. Thus, in this document (the specification and the claims), adifference between a potential at one point and a potential which is areference (also referred to as a reference potential) is given as avoltage of the one point in some cases unless otherwise specified.

One of the source and drain of the transistor 112 is electricallyconnected to the signal line 103 and the transistor 112 enters an onstate (ON) or an off state (OFF) depending on a gate voltage. Asillustrated in FIG. 1, for example, a scan line 107 is additionallyprovided and electrically connected to the gate of the transistor 112,and the gate voltage of the transistor 112 is controlled by a gatesignal input to the gate of the transistor 112 through the scan line107. The scan line 107 is, for example, electrically connected to thescan line driver circuit, whereby the voltage applied to the scan line107 can be controlled. The other of the source and drain of thetransistor 112 is grounded or supplied with a predetermined voltage(also referred to as a reference voltage or Vref). The reference voltageis supplied to the other of the source and drain of the transistor 112,for example, by providing a reference voltage line 108 and electricallyconnecting the other of the source and drain of the transistor 112 tothe reference voltage line 108 as illustrated in FIG. 1. The transistor112 enters an on state or an off state, whereby the transistor 112serves as a switching element for discharging charge through the signalline 103 in a non-selection period if charge builds up in the signalline 103 or an element, electrode, or wiring which is electricallyconnected to the signal line 103.

Note that the structure of the display device is not limited to thestructure illustrated in FIG. 1, and the transistor 112 can be amulti-gate transistor including a plurality of channel formationregions. Further, a plurality of transistors having the same structureas the transistor 112 can be electrically connected in parallel.

The pixel portion 102 includes a pixel 104. Note that in the pixelportion 102, a plurality of pixels 104 may be arranged in rows andcolumns. In the case where a plurality of pixels 104 are arranged inrows, the same number of scan lines as the number of rows of the pixelsare provided. In the case where a plurality of pixels 104 are arrangedin columns, the same number of signal lines as the number of columns ofthe pixels are provided. Further, in the case where a plurality ofsignal lines are arranged in columns, the transistor 112 may be providedfor each signal line and one of the source and drain of the transistors112 may be electrically connected to the respective signal lines.

The pixel 104 is supplied with a signal including image data from thedriver circuit 111 through the signal line 103, whereby its displaystate is controlled. The pixel 104, for example, includes a switchingelement such as a transistor and a display element such as a liquidcrystal element or a light-emitting element, a state of which iscontrolled by turning on or off of the switching element. The timing atwhich image data is input is set in accordance with, for example, asignal which is input through a scan line 105 in the case where the scanline 105 is additionally provided as illustrated in FIG. 1.

Note that in the display device illustrated in FIG. 1, the depletiontype transistor in the driver circuit 111 and the depletion typetransistor used as the transistor 112 can have the same structure; forexample, they both can have an oxide semiconductor layer which includesa channel formation region. Further, in the display device illustratedin FIG. 1, the depletion type transistor in the driver circuit 111 andthe depletion type transistor used as the transistor 112 can have thesame conductivity type. However, this embodiment is not limited thereto;for example, the structure of the transistor 112 can be different fromthat of the transistor in the driver circuit 111.

Further, as the transistor in the driver circuit 111 and the transistor112, bottom gate transistors can be used, for example.

Further, the channel width of the transistor 112 may be larger than thatof the transistor in the driver circuit 111. By making the channel widthof the transistor 112 sufficiently large, an effect of unwanted chargebuild-up on switching operation of the transistor 112 can be reduced.

Next, an example of operation of the display device illustrated in FIG.1 will be described. Note that, in this given example, the transistor112 is an n-channel transistor and a scan signal which is input throughthe scan line 105 and the scan line 107 is a binary digital signalhaving a first voltage level and a second voltage level. The scan signalwhich is input through the scan line 105 has voltage V1 (also simplyreferred to as V1) in the first voltage level and voltage V2 (alsosimply referred to as V2) in the second voltage level; whereas the scansignal which is input through the scan line 107 has voltage V2 in thefirst voltage level and voltage V3 (also simply referred to as V3) inthe second voltage level. Voltage V1 is higher than voltage V2, voltageV3 is lower than voltage V2, and voltage V2 is at ground potential. Inaddition, ground potential (also referred to as Vgnd) is applied to thereference voltage line 108.

An example of operation of the display device illustrated in FIG. 1 isdivided into a period in which the pixel 104 is not selected (alsoreferred to as a non-selection period) and a period in which the pixel104 is selected (also referred to as a selection period). In the casewhere a plurality of pixels 104 are arranged in rows and columns, thenon-selection period is a period in which none of the pixels 104 isselected, whereas the selection period is a period in which any one ofthe pixels 104 is selected.

First, in the non-selection period, the voltage of the scan line 105 isvoltage V2 and the voltage of the scan line 107 (also referred to asV₁₀₇) is voltage V2.

Since the transistor 112 enters an on state at this time due to thevoltage of the scan line 107, the signal line 103 and the referencevoltage line 108 are brought into electrical connection; thus, if chargebuilds up in the signal line 103 or an element, electrode, or wiringwhich is electrically connected to the signal line 103, the built upcharge is discharged to the reference voltage line 108 through thesignal line 103 and the transistor 112.

Next, in the selection period, the voltage of the scan line 105 changesto voltage V1 and the voltage of the scan line 107 changes to voltageV3.

At this time, the transistor 112 enters an off state; thus, a signalincluding image data is input from the driver circuit 111 to the pixel104 through the signal line 103. The pixel 104 to which a signalincluding image data is input is brought into a display state inaccordance with the input image data.

Also in the case where a plurality of pixels 104 are arranged in rowsand columns, similar operation is performed. First, since thetransistors 112 which are electrically connected to the respectivesignal lines 103 enter an on state in the non-selection period, thesignal lines 103 and the reference voltage line 108 are brought in toelectrical connection; thus, if charge builds up in the signal lines 103or an element, electrode, or wiring which is electrically connected tothe signal lines 103, the charge is discharged to the reference voltageline 108 through the signal lines 103 and the transistors 112. In theselection period, the transistors 112 enter an off state, and image datais input to the pixels 104 through the scan lines 105 sequentially. Thepixel to which image data is input is brought into a display state.

A plurality of non-selection periods in which the transistor 112 entersan on state may be provided. For example, the non-selection period canbe provided to switch the transistor 112 to an on state, between aselection period in a frame and a selection period in the followingframe.

As described above, in the display device of this embodiment, if chargebuilds up in an element, electrode, or wiring which is electricallyconnected to the signal line, the built up charge can be selectivelydischarged to the reference voltage line through the signal line. Inaddition, when a display device is formed using a bottom gatetransistor, if charge builds up in a back channel portion, the built upcharge can be discharged to the reference voltage line through thesignal line. Thus, generation of a parasitic channel can be suppressedand leakage current can be reduced.

Further, when a depletion type transistor is used as the transistor fordischarging unwanted built up charge, the transistor can be switched toan on state without voltage application. Thus, unwanted built up chargecan be discharged when the display device is not operated; accordingly,influence on the display operation can be suppressed.

Embodiment 2

In this embodiment, an example of a structure of a driver circuitportion in a display device which is one embodiment of the presentinvention will be described.

A structure of the driver circuit portion of this embodiment will bedescribed with reference to FIGS. 2A and 2B. FIGS. 2A and 2B illustratean example of the structure of the driver circuit portion in thisembodiment. FIG. 2A is a top view and FIG. 2B is a cross-sectional viewtaken along line Z1-Z2 and line Z3-Z4 of FIG. 2A.

The driver circuit portion illustrated in FIGS. 2A and 2B includes atransistor 251, a transistor 252, and a transistor 253 over a substrate201.

The transistor 251 and the transistor 252 are examples of an elementused in a logic circuit in the driver circuit 111 illustrated in FIG. 1.The equivalent circuit diagram of the transistors is illustrated in FIG.3.

The transistor 251 is a depletion type transistor and a high powersupply voltage (also referred to as Vdd) is applied to one of its sourceand drain. A gate and the other of the source and drain of thetransistor are electrically connected to each other (i.e., thetransistor 251 is diode-connected).

Note that although the gate and the other of the source and drain areelectrically connected in the transistor 251 illustrated in FIG. 3(i.e., the transistor 251 is diode-connected), the structure is notlimited thereto. For example, the gate may be electrically connected tothe one of the source and drain of the transistor 251. Further, anothersignal may be input through the gate.

The transistor 252 is an enhancement type transistor in which a signalis input through a gate, one of a source and drain of the transistor 252is electrically connected to the other of the source and drain, and alow power supply voltage (also referred to as Vss) is applied to theother of the source and drain. The low power supply voltage is at groundpotential or a given voltage, for example.

Note that the high power supply voltage is relatively higher than thelow power supply voltage, and the low power supply voltage is relativelylower than the high power supply voltage. Each value is set asappropriate depending on specifications of the circuit or the like, andthus there is no particular limitation on the value. For example, evenwhen the value of Vdd is higher than the value of Vss, the value of|Vdd| is not always higher than the value of |Vss|. Moreover, even whenthe value of Vdd is higher than the value of Vss, the value of Vgnd isnot always equal to or higher than the value of Vss.

For example, when a high-level digital signal is input to the gate ofthe transistor 251 as an input signal (also referred to as IN), thelogic circuit outputs a low-level digital signal as an output signal(also referred to as OUT), whereas when a low-level digital signal isinput to the gate of the transistor 251, the logic circuit outputs ahigh-level digital signal as an output signal.

The transistor 253 corresponds to the transistor 112 illustrated in FIG.1.

Next, structures of the transistors will be described. The transistor251 includes a gate electrode 211 a over the substrate 201, a gateinsulating layer 202 over the gate electrode 211 a, an oxidesemiconductor layer 223 a over the gate electrode 211 a with the gateinsulating layer 202 interposed therebetween, and a conductive layer 215a and a conductive layer 215 b over parts of the oxide semiconductorlayer 223 a.

The transistor 252 includes a gate electrode 211 b over the substrate201, the gate insulating layer 202 over the gate electrode 211 b, anoxide semiconductor layer 223 b over the gate electrode 211 b with thegate insulating layer 202 interposed therebetween, and the conductivelayer 215 b and the conductive layer 215 c over parts of the oxidesemiconductor layer 223 b.

The transistor 253 includes a gate electrode 211 c over the substrate201, the gate insulating layer 202 over the gate electrode 211 c, anoxide semiconductor layer 223 c over the gate electrode 211 c with thegate insulating layer 202 interposed therebetween, and the conductivelayer 215 b and a conductive layer 215 d over parts of the oxidesemiconductor layer 223 c.

Each of the conductive layers 215 a to 215 d serves as a sourceelectrode or a drain electrode.

The oxide semiconductor layers 223 a to 223 c are subjected todehydration or dehydrogenation and an oxide insulating layer 207 isformed in contact with the oxide semiconductor layers 223 a to 223 c. Atransistor including such an oxide semiconductor layer as a channelformation layer has high reliability because a V-th shift due to along-term use or high load hardly occurs.

Note that a nitride insulating layer may be provided over the oxideinsulating layer 207. It is preferable that the nitride insulating layerbe in contact with the gate insulating layer 202 or an insulating layerserving as a base which is provided below the oxide insulating layer 207so as to block entry of impurities such as moisture, hydrogen ions, andOV⁻ from the vicinity of a side surface of the substrate. It isparticularly effective to use a silicon nitride layer as the gateinsulating layer 202, which is in contact with the oxide insulatinglayer 207, or the insulating layer serving as the base. In other words,when the silicon nitride layers are provided over, under, and around theoxide semiconductor layer so as to surround the oxide semiconductorlayer, the reliability of the display device is improved.

Further, in the driver circuit portion illustrated in FIGS. 2A and 2B, aplanarizing insulating layer 216 is provided over the oxide insulatinglayer 207. In addition, a conductive layer 217 a is provided over theoxide semiconductor layer 223 a with the oxide insulating layer 207 andthe planarizing insulating layer 216 interposed therebetween, aconductive layer 2176 is provided over the oxide semiconductor layer 223b with the oxide insulating layer 207 and the planarizing insulatinglayer 216 interposed therebetween, and a conductive layer 217 c isprovided over the oxide semiconductor layer 223 c with the oxideinsulating layer 207 and the planarizing insulating layer 216 interposedtherebetween. Each of the conductive layers 217 a to 217 c serves as asecond gate electrode. The second gate voltage is applied to theconductive layers 217 a to 217 c, whereby the threshold voltages of thetransistors 251 to 253 can be controlled.

Note that the planarizing insulating layer 216 is not necessarilyprovided. In the case where the planarizing insulating layer 216 is notprovided, the conductive layers 217 a to 217 c can be provided over theoxide insulating layer 207 (over the nitride insulating layer ifprovided).

For example, when a voltage equal to or higher than that of the sourceelectrode is applied to each of the conductive layers 217 a to 217 c,the threshold voltages of the transistors are shifted to a negativeside; when a voltage lower than that of the source electrode is appliedto each of the conductive layers 217 a to 217 c, the threshold voltagesof the transistors are shifted to a positive side.

For example, in the case of a depletion type transistor, the thresholdvoltage can be shifted to a positive side when the voltage of the secondgate electrode is set sufficiently lower than that of the sourceelectrode. Accordingly, by using the second gate electrode, depletiontype transistors can be selectively changed into enhancement typetransistors.

In the case of an enhancement type transistor, the threshold voltage canbe shifted to a negative side when the voltage of the second gateelectrode is set sufficiently higher than that of the source electrode.Accordingly, by using the second gate electrode, enhancement typetransistors can be selectively changed into depletion type transistors.

In addition, in the case of an enhancement type transistor, thethreshold voltage can be further shifted to a positive side when thevoltage of the second gate electrode is set sufficiently lower than thatof the source electrode. Thus, by applying a sufficiently low voltage tothe second gate electrode, characteristics of the transistor can bechanged so that the transistor remains off even when the input signal ishigh.

In the above manner, the threshold voltage of a transistor having asecond gate electrode can be controlled by a voltage applied to thesecond gate electrode. Accordingly, if second gate voltages are appliedto the respective second gate electrodes so that the transistor 251becomes a depletion type while the transistor 252 becomes an enhancementtype, for example, a logic circuit can be provided using the transistorsincluding an oxide semiconductor. Further, by providing the transistor253 of a depletion type, the depletion type transistor for dischargingcharge if charge builds up in the signal line or an element, electrode,or wiring which is electrically connected to the signal line, will beprovided. Thus, even in a display device using transistors including anoxide semiconductor, leakage current can be reduced. In addition, when adisplay device is formed using a bottom gate transistor, if chargebuilds up in a back channel portion, the built up charge can bedischarged to the reference voltage line through the signal line. Thus,generation of a parasitic channel can be suppressed and leakage currentcan be reduced.

Note that although in the driver circuit portion illustrated in FIGS. 2Aand 2B, the conductive layers 217 a to 217 c are respectively providedover the transistors 251 to 253, the structure is not limited thereto.For example, a conductive layer serving as a second gate electrode maybe provided only over a transistor which serves as an enhancement typetransistor or only over a transistor which serves as a depletion typetransistor.

Further, the display device of this embodiment may have a structure inwhich a gate electrode of a transistor in the logic circuit is directlyconnected to a source electrode or drain electrode of the othertransistor. For example, if an opening is formed in the gate insulatinglayer 202 so that the gate electrode 211 a of the transistor 251 may bein contact with the conductive layer 215 b of the transistor 252,favorable contact can be provided, whereby contact resistance can bereduced. Accordingly, the number of openings can be reduced, whichresults in reducing the area occupied by the logic circuit.

Alternatively, the display device of this embodiment may have astructure illustrated in FIG. 4. In the structure, an oxide conductivelayer 214 a and an oxide conductive layer 214 b which serve as a pair ofbuffer layers are provided over the oxide semiconductor layer 223 a, andthe conductive layer 215 a and the conductive layer 215 b which serve asa pair of electrodes are provided in contact with the oxide conductivelayer 214 a and the oxide conductive layer 214 b in the transistor 251;an oxide conductive layer 214 c and an oxide conductive layer 214 dwhich serve as a pair of buffer layers are provided over the oxidesemiconductor layer 223 b, and the conductive layer 215 b and theconductive layer 215 c which serve as a pair of electrodes are providedin contact with the oxide conductive layer 214 c and the oxideconductive layer 214 d in the transistor 252; and an oxide conductivelayer 214 e and an oxide conductive layer 214 f which serve as a pair ofbuffer layers are provided over the oxide semiconductor layer 223 c, andthe conductive layer 215 b and the conductive layer 215 d which serve asa pair of electrodes are provided in contact with the oxide conductivelayer 214 e and the oxide conductive layer 214 f in the transistor 253.

The oxide conductive layer 214 a and the oxide conductive layer 214 b,and the oxide conductive layer 214 c and the oxide conductive layer 214d have higher conductivity than the oxide semiconductor layer 223 a andthe oxide semiconductor layer 2236, and serve as source regions anddrain regions of the transistor 251 and the transistor 252.

As an oxide conductive film which is used for forming the oxideconductive layers 214 a to 214 f, a film of a conductive material thattransmits visible light, such as an In—Sn—Zn—O-based, In—Al—Zn—O-based,Sn—Ga—Zn—O-based, Al—Ga—Zn—O-based, Sn—Al—Zn—O-based, In—Zn—O-based,Sn—Zn—O-based, Al—Zn—O-based, In—Sn—O-based, In—O-based, Sn—O-based, orZn—O-based metal oxide can be used. The thickness of the oxideconductive film is set as appropriate within the range of 1 nm to 300 nminclusive. In the case of using a sputtering method, it is preferablethat film formation be performed with a target including SiO₂ at 2 wt %to 10 wt % inclusive so that SiO_(x) (x>0) which inhibitscrystallization is included in the light-transmitting conductive film sothat the light-transmitting conductive film may be prevented from beingcrystallized in heat treatment performed later for dehydration ordehydrogenation.

Further, if an In—Ga—Zn—O-based film is used as the oxide semiconductorlayer and the oxide conductive layer, for example, the oxidesemiconductor layers 223 a to 223 c serving as a channel formationregion and the oxide conductive layers 214 a to 214 f serving as sourceregions and drain regions can be separately formed under different filmformation conditions.

For example, in the case of film formation by a sputtering method, theoxide conductive layers 214 a to 214 f, which are formed using an oxidesemiconductor film formed in an argon gas, have n-type conductivity andhave an activation energy (ΔE) of 0.01 eV to 0.1 eV inclusive.

Note that in this embodiment, the oxide conductive layers 214 a to 214 fare In—Ga—Zn—O-based films and include at least amorphous components.Moreover, the oxide conductive layers 214 a to 214 f may include crystalgrains (also referred to as nanocrystals). The crystal grains in theoxide conductive layers 214 a to 214 f have a diameter of approximately1 nm to 10 nm, typically approximately 2 nm to 4 nm.

The oxide conductive layers 214 a to 214 f are not necessarily provided,but if the oxide conductive layers 214 a to 214 f are provided betweenthe oxide semiconductor layers 223 a to 223 c serving as channelformation layers and the conductive layers 215 a to 215 d serving assource electrodes and drain electrodes, good electrical junctions can beobtained and the transistors 251 to 253 can operate stably. Moreover,high mobility can be maintained at a high drain voltage.

Then, a manufacturing method of the driver circuit portion illustratedin FIG. 2 will be described with reference to FIGS. 5A to 5C and FIGS.6A and 6B. FIGS. 5A to 5C and FIGS. 6A and 6B are cross-sectional viewsof an example of a manufacturing method of the driver circuit portionillustrated in FIGS. 2A and 2B.

First, the substrate 201 is prepared. A conductive film is formed overthe substrate 201, and a first photolithography step is performed toform the gate electrode 211 a, the gate electrode 211 b, and the gateelectrode 211 c (see FIG. 5A). Note that the formed gate electrodespreferably have a tapered shape.

It is necessary that the substrate 201 have an insulating surface andhave at least enough heat resistance to withstand heat treatment to beperformed later. As the substrate 201, a glass substrate or the like canbe used, for example.

As a glass substrate, if the temperature of a later heat treatment ishigh, a glass substrate whose strain point is 730° C. or higher ispreferably used. As a glass substrate, a glass material such asaluminosilicate glass, aluminoborosilicate glass, or barium borosilicateglass is used, for example. Note that by containing a larger amount ofbarium oxide (BaO) than boric acid, a glass substrate which isheat-resistant and more practical can be obtained. Therefore, a glasssubstrate containing more BaO than B₂O₃ is preferably used.

Note that a substrate formed of an insulator such as a ceramicsubstrate, a quartz substrate, or a sapphire substrate may be used asthe substrate 201 instead of the above glass substrate. Alternatively, acrystallized glass substrate or the like may be used.

An insulating film serving as a base film may be provided between thesubstrate 201 and the gate electrodes 211 a to 211 c. The base film hasa function of preventing diffusion of an impurity element from thesubstrate 201, and can be formed to have a single-layer or stacked-layerstructure using one or more of a silicon nitride film, a silicon oxidefilm, a silicon nitride oxide film, and a silicon oxynitride film.

As an example of a material of the conductive film for forming the gateelectrodes 211 a to 211 c, a metal material such as molybdenum,titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, orscandium or an alloy material containing any of these materials as amain component can be used. The conductive film for forming the gateelectrodes 211 a to 211 c can be formed with a single film or a stackedfilm containing one or plurality of these materials.

As the conductive film for forming the gate electrodes 211 a to 211 c,for example, a three-layer stack film including a titanium film, analuminum film provided over the titanium film, and a titanium filmprovided over the aluminum film, or a three-layer stack film including amolybdenum film, an aluminum film provided over the molybdenum film, anda molybdenum film provided over the aluminum film is preferably used.Needless to say, a single layer film, a two-layer stack film, or a stackfilm of four or more layers may be used as the metal conductive film.When a stack of conductive films of a titanium film, an aluminum film,and a titanium film is used as the conductive film, etching can beperformed by a dry etching method with a chlorine gas.

Then, the gate insulating layer 202 is formed over the gate electrodes211 a to 211 c.

The gate insulating layer 202 can be formed to have a single-layer orstacked-layer structure of any of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, and a silicon nitride oxidelayer by a plasma CVD method, a sputtering method, or the like. Forexample, when a silicon oxynitride layer is formed, it may be formed bya plasma CVD method using SiH₄, oxygen, and nitrogen as a film formationgas. The gate insulating layer 202 has a thickness of 100 nm to 500 nminclusive. In the case of a stacked-layer structure, the first gateinsulating layer with a thickness of 50 nm to 200 nm inclusive and thesecond gate insulating layer with a thickness of 5 nm to 300 nminclusive are stacked in this order. When a silicon oxide film which isformed using a silicon target doped with phosphorus or boron is used asthe gate insulating layer 202, entry of impurities (such as moisture,hydrogen ions, and OH⁻) can be suppressed.

In this embodiment, a silicon nitride layer having a thickness of 200 nmor less is formed by a plasma CVD method as the gate insulating layer202.

Then, an oxide semiconductor film with a thickness of 2 nm to 200 nminclusive is formed over the gate insulating layer 202. The thickness ispreferably 50 nm or less in order that the oxide semiconductor film maybe amorphous even when heat treatment for dehydration or dehydrogenationis performed after the oxide semiconductor film is formed. By making thethickness of the oxide semiconductor film small, crystallization thereofcan be suppressed when the heat treatment is performed after theformation of the oxide semiconductor layer.

Note that before the oxide semiconductor film is formed by a sputteringmethod, powdery substances which are generated at the time of the filmformation and attached to a surface of the gate insulating layer 202 arepreferably removed by reverse sputtering in which an argon gas isintroduced and plasma is generated. The reverse sputtering refers to amethod in which, without application of a voltage to a target side, anRF power source is used for application of a voltage to a substrate sidein an argon atmosphere to generate plasma in the vicinity of thesubstrate so that a surface may be modified. Note that instead of anargon atmosphere, nitrogen, helium, oxygen, or the like may be used.

As the oxide semiconductor film, any of the following can be used: anIn—Ga—Zn—O-based film, an In—Sn—Zn—O-based oxide semiconductor film, anIn—Al—Zn—O-based oxide semiconductor film, a Sn—Ga—Zn—O-based oxidesemiconductor film, an Al—Ga—Zn—O-based oxide semiconductor film, aSn—Al—Zn—O-based oxide semiconductor film, an In—Zn—O-based oxidesemiconductor film, a Sn—Zn—O-based oxide semiconductor film, anAl—Zn—O-based oxide semiconductor film, an In—Sn—O-based oxidesemiconductor film, an In—O-based oxide semiconductor film, a Sn—O-basedoxide semiconductor film, and a Zn—O-based oxide semiconductor film. Inthis embodiment, the oxide semiconductor film is formed using anIn—Ga—Zn—O-based oxide semiconductor target by a sputtering method.Alternatively, the oxide semiconductor film can be formed by asputtering method in a rare gas (typically, argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere including a rare gas (typically,argon) and oxygen. In the case of using a sputtering method, a film maybe formed with a target including SiO₂ at 2 wt % to 10 wt % inclusive sothat SiO_(x) (x>0) which inhibits crystallization is included in theoxide semiconductor film. Accordingly, crystallization of oxidesemiconductor layers which are to be formed later can be suppressed inheat treatment performed later for dehydration or dehydrogenation.

The oxide semiconductor film is preferably an oxide semiconductor filmcontaining In, more preferably an oxide semiconductor containing In andGa.

Here, the oxide semiconductor film is formed with use of an oxidesemiconductor target including In, Ga, and Zn (at a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio]), under conditions where thedistance between the substrate and the target is 100 mm, the pressure is0.6 Pa, the direct current (DC) power supply is 0.5 kW, and theatmosphere is oxygen (the proportion of the oxygen flow is 100%). Notethat a pulse direct current (DC) power supply is preferable becausepowdery substances which are generated at the time of the film formationcan be reduced and the film thickness can be made uniform. In thisembodiment, an In—Ga—Zn—O-based film is formed using an In—Ga—Zn—O-basedoxide semiconductor target by a sputtering method as the oxidesemiconductor film.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used for a sputtering power supply, aDC sputtering method in which a DC power supply source is used for asputtering power supply, and a pulsed DC sputtering method in which abias is applied in a pulsed manner. An RF sputtering method is mainlyused in the case where an insulating film is formed, and a DC sputteringmethod is mainly used in the case where a metal conductive film isformed.

In addition, there is also a multi-source sputtering apparatus in whicha plurality of targets of different materials can be set. With themulti-source sputtering apparatus, films of different materials can beformed to be stacked in the same chamber, or a film can be formed byelectric discharge of plural kinds of material at the same time in thesame chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering method,and a sputtering apparatus used for an ECR sputtering method in whichplasma generated with the use of microwaves is used without using glowdischarge.

Furthermore, as a deposition method using a sputtering method, there arealso a reactive sputtering method in which a target substance and asputtering gas component are chemically reacted with each other duringdeposition to form a thin compound film thereof, and a bias sputteringmethod in which voltage is also applied to a substrate duringdeposition.

Then, the oxide semiconductor film is processed into islands by a secondphotolithography step, whereby the oxide semiconductor layer 223 a, theoxide semiconductor layer 223 b, and the oxide semiconductor layer 223 care formed (see FIG. 5B). Note that after the second photolithographystep, it is preferable that the oxide semiconductor layers 223 a to 223c be subjected to heat treatment (at 400° C. or higher and lower than750° C.) in an inert gas atmosphere (such as nitrogen, helium, neon, orargon) in order to remove impurities such as hydrogen and water from thelayers.

Next, the oxide semiconductor layers are subjected to dehydration ordehydrogenation. First heat treatment for dehydration or dehydrogenationis performed at a temperature of 400° C. or higher and lower than 750°C., preferably, 425° C. or higher and lower than 750° C. Note that inthe case of the temperature of 425° C. or higher and lower than 750° C.,the heat treatment time may be one hour or shorter, whereas in the caseof the temperature lower than 425° C., the heat treatment time is longerthan one hour. Here, the substrate is put into an electric furnace whichis one of heat treatment apparatuses and heat treatment is performed onthe oxide semiconductor layers in a nitrogen atmosphere. After that, theoxide semiconductor layers are not exposed to air and water and hydrogenare prevented from being mixed into the oxide semiconductor layersagain. In this embodiment, slow cooling is performed from the heatingtemperature T at which the oxide semiconductor layers are subjected todehydration or dehydrogenation to a temperature low enough to preventwater from entering again, specifically to a temperature that is lowerthan the heating temperature T by 100° C. or more, in a nitrogenatmosphere and in one furnace. Moreover, without limitation to anitrogen atmosphere, dehydration or dehydrogenation is performed inhelium, neon, argon, or the like.

Note that the heat treatment apparatus is not limited to an electricfurnace, and an apparatus may be provided with a device for heating anobject by heat conduction or thermal radiation from a heater such as aresistance heater. For example, an RTA (rapid thermal annealing)apparatus such as a GRTA (gas rapid thermal annealing) apparatus or anLRTA (lamp rapid thermal annealing) apparatus can be used. An LRTAapparatus is an apparatus for heating an object by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressuresodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which hardly reacts with the object by heat treatment isused. For example, nitrogen or a rare gas such as argon is used.

When the oxide semiconductor layers are subjected to heat treatment at400° C. or higher and lower than 750° C., the dehydration ordehydrogenation of the oxide semiconductor layers can be achieved; thus,water (H₂O) can be prevented from being contained again in the oxidesemiconductor layers in later steps.

Note that in the first heat treatment, it is preferable that water,hydrogen, or the like be not contained in nitrogen or a rare gas such ashelium, neon, or argon. In the first heat treatment, nitrogen or a raregas such as helium, neon, or argon which is introduced into the heattreatment apparatus preferably has a purity of 6N (99.9999%) or more,more preferably 7N (99.99999%) or more (i.e., the impurity concentrationis preferably 1 ppm or less, more preferably 0.1 ppm or less).

Note that the oxide semiconductor layers become microcrystalline layersor polycrystalline layers by crystallization in some cases, depending onconditions of the first heat treatment or a material of the oxidesemiconductor layers. For example, the oxide semiconductor layers maycrystallize to become microcrystalline semiconductor layers having acrystallinity of 90% or more, or 80% or more. Further, depending onconditions of the first heat treatment and a material of the oxidesemiconductor layers, the oxide semiconductor layers may becomeamorphous oxide semiconductor layers containing no crystallinecomponent.

The oxide semiconductor layers are changed into oxygen-deficient andlow-resistance oxide semiconductor layers, i.e., n-type low-resistanceoxide semiconductor layers, after the first heat treatment. An oxidesemiconductor layers after the first heat treatment have a highercarrier concentration than the oxide semiconductor layers shortly afterthe formation and preferably have a carrier concentration of 1×10¹⁸/cm³or more.

Note that the gate electrodes 211 a to 211 c may be crystallized intomicrocrystalline layers or polycrystalline layers depending on theconditions of the first heat treatment or the material of the gateelectrodes. For example, in the case where indium oxide-tin oxide alloylayers are used as the gate electrodes 211 a to 211 c, the gateelectrodes 211 a to 211 c are crystallized by the first heat treatmentat 450° C. for one hour, but in the case where indium oxide-tin oxidealloy layers containing silicon oxide are used as the gate electrodes211 a to 211 c, the gate electrodes 211 a to 211 c are not crystallized.

The first heat treatment of the oxide semiconductor layer may beperformed on the oxide semiconductor film before being processed intothe island-shaped oxide semiconductor layers. In that case, after thefirst heat treatment, the substrate is taken out of the heat treatmentapparatus and subjected to the photolithography step.

Then, a conductive film for forming source electrodes and drainelectrodes of transistors is formed over the gate insulating layer 202and the oxide semiconductor layers 223 a to 223 c.

For the conductive film, an element selected from Ti, Mo, W, Al, Cr, Cu,and Ta, an alloy containing any of these elements as a component, analloy containing any of these elements in combination, or the like isused. The conductive film is not limited to a single layer containingany of these elements and may be a stack of two or more layers. In thisembodiment, a three-layer conductive film in which a titanium film (witha thickness of 100 nm), an aluminum film (with a thickness of 200 nm),and a titanium film (with a thickness of 100 nm) are stacked is formed.Instead of a titanium film, a titanium nitride film may be used.

Note that in the case of performing heat treatment at 200° C. to 600°C., the conductive film preferably has heat resistance so as to be ableto withstand this heat treatment. For example, it is preferable to usean aluminum alloy to which an element which prevents hillocks is added,or a conductive film stacked with a heat-resistance conductive film.Note that as a method for forming the conductive film, a sputteringmethod, a vacuum evaporation method (an electron beam evaporation methodor the like), an arc discharge ion plating method, or a spray method isused. Alternatively, the conductive film may be formed by discharging aconductive nanopaste of silver, gold, copper, or the like by a screenprinting method, an ink-jet method, or the like and then baking thenanopaste.

Then, a third photolithography step is performed in which a resist mask233 a, a resist mask 233 b, a resist mask 233 c, and a resist mask 233 dare formed over the conductive film for forming source electrodes anddrain electrodes of transistors, and the conductive film is partlyetched using the resist masks 233 a to 233 d to form the conductivelayer 215 a, the conductive layer 215 b, the conductive layer 215 c, andthe conductive layer 215 d (see FIG. 5C).

In the third photolithography step, only the conductive film which is onand in contact with the oxide semiconductor layer is selectivelyremoved. For example, when an ammonia peroxide mixture (at a compositionweight ratio of hydrogen peroxide:ammonia:water=5:2:2) or the like isused as an alkaline etchant in order to selectively remove only portionsof the metal conductive film which are on and in contact with theIn—Ga—Zn—O-based oxide semiconductor layers, the metal conductive filmcan be selectively removed and the oxide semiconductor layers formed ofan oxide semiconductor can be left.

Although it depends on the etching conditions, exposed regions of theoxide semiconductor layers may be etched in the third photolithographystep. In that case, the oxide semiconductor layer is thinner in a regionsandwiched between the source electrode layer and the drain electrodelayer (a region sandwiched between the conductive layer 215 a and theconductive layer 215 b) than in a region covered with the sourceelectrode layer or the drain electrode layer over the gate electrode 211a. In addition, the oxide semiconductor layer is thinner in a regionsandwiched between the source electrode layer and the drain electrodelayer (a region sandwiched between the conductive layer 215 b and theconductive layer 215 c) than in a region covered with the sourceelectrode layer or the drain electrode layer over the gate electrode 211b. In addition, the oxide semiconductor layer is thinner in a regionsandwiched between the source electrode layer and the drain electrodelayer (a region sandwiched between the conductive layer 215 b and theconductive layer 215 d) than in a region covered with the sourceelectrode layer or the drain electrode layer over the gate electrode 211c.

Then, the oxide insulating layer 207 is formed over the gate insulatinglayer 202, the oxide semiconductor layer 223 a, the oxide semiconductorlayer 223 b, and the oxide semiconductor layer 223 c. At this stage,parts of the oxide semiconductor layers 223 a to 223 c are in contactwith the oxide insulating layer 207. Note that a region of the oxidesemiconductor layer which overlaps with the gate electrode with the gateinsulating layer interposed therebetween is a channel formation region.

The oxide insulating layer 207 can be formed with a thickness at least 1nm by a method by which impurities such as water or hydrogen is notmixed into the oxide insulating layer; for example, a sputtering methodmay be employed as appropriate. In this embodiment, a silicon oxide filmis formed as the oxide insulating layer by a sputtering method. Thesubstrate temperature in film formation may be room temperature to 300°C. inclusive. In this embodiment, the substrate temperature is 100° C.The silicon oxide film can be formed by a sputtering method in a raregas (typically, argon) atmosphere, an oxygen atmosphere, or a mixedatmosphere including a rare gas (typically, argon) and oxygen. As atarget, a silicon oxide target or a silicon target can be used. Forexample, with use of a silicon target, a silicon oxide film can beformed by a sputtering method in an atmosphere of oxygen and a rare gas.As the oxide insulating layer which is formed in contact with the oxidesemiconductor layers 223 a to 223 d, an inorganic insulating film whichdoes not include impurities such as moisture, a hydrogen ion, or OH⁻ andblocks entry of these from the outside is used. Specifically, a siliconoxide film, a silicon nitride oxide film, an aluminum oxide film, or analuminum oxynitride film is used. Note that an oxide insulating layerformed by a sputtering method is distinctively dense and even a singlelayer thereof can be used as a protective film for suppressing aphenomenon in which impurities are diffused into a layer in contact withthe oxide insulating layer. In addition, a target doped with phosphorus(P) or boron (B) can be used so that phosphorus (P) or boron (B) isadded to the oxide insulating layer.

In this embodiment, the oxide insulating layer is formed by a pulsed DCsputtering method using a columnar polycrystalline, boron-doped silicontarget which has a purity of 6N (the resistivity is 0.01 Ωcm), in whichthe distance between the substrate and the target (T-S distance) is 89mm, the pressure is 0.4 Pa, the direct-current (DC) power source is 6kW, and the atmosphere is oxygen (the proportion of the oxygen flow is100%). The film thickness is 300 nm.

The oxide insulating layer 207 is provided on and in contact with thechannel formation region in the oxide semiconductor layer and alsoserves as a channel protective layer.

Next, second heat treatment (preferably, at 200° C. to 400° C.inclusive, for example, at 250° C. to 350° C. inclusive) may beperformed in an inert gas atmosphere or in a nitrogen gas atmosphere.For example, the second heat treatment is performed at 250° C. for onehour in a nitrogen atmosphere. By the second heat treatment, portions ofthe oxide semiconductor layers 223 a to 223 c are heated while being incontact with the oxide insulating layer 207, and other portions of theoxide semiconductor layers 223 a to 223 c are heated while being incontact with the conductive layers 215 a to 215 d.

When the oxide semiconductor layers 223 a to 223 c whose resistance hasbeen lowered by the first heat treatment are subjected to the secondheat treatment while being in contact with the oxide insulating layer207, regions in contact with the oxide insulating layer 207 are broughtinto oxygen-excess state. As a result, the oxide semiconductor layers223 a to 223 c are changed into i-type oxide semiconductor layers(high-resistance oxide semiconductor layers) in the depth direction fromthe regions in contact with the oxide insulating layer 207 (see FIG.6A).

Note that the timing of the second heat treatment is not limited to thetiming shortly after the third photolithography step as long as it isafter the third photolithography step.

Then, the planarization insulating layer 216 is formed over the oxideinsulating layer 207. The planarization insulating layer 216 can beformed of a heat-resistant organic material, such as polyimide, acrylic,polyimide amide, benzocyclobutene, polyamide, or epoxy. As analternative to such organic materials, it is possible to use alow-dielectric constant material (a low-k material), a siloxane-basedresin, phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), orthe like. The planarization insulating layer may be formed by stacking aplurality of insulating films formed of any of these materials.

Note that the siloxane-based resin is a resin including a Si—O—Si bondformed using a siloxane-based material as a starting material. Thesiloxane-based resin may include an organic group (e.g., an alkyl groupor an aryl group) or a fluoro group as a substituent. The organic groupmay contain a fluoro group.

There is no particular limitation on the method of forming theplanarizing insulating layer 216. Depending on the material, theplanarizing insulating layer 216 can be formed by a method such assputtering method, an SOG method, a spin coating method, a dippingmethod, a spray coating method, or a droplet discharge method (e.g., anink jetting method, screen printing, or offset printing), or by using atool (apparatus) such as a doctor knife, a roll coater, a curtaincoater, a knife coater, or the like.

After the resist masks are removed, a light-transmitting conductive filmis formed. The light-transmitting conductive film is formed of indiumoxide (In₂O₃), an indium oxide-tin oxide alloy (In₂O₃—SnO₂, abbreviatedas ITO), or the like by a sputtering method, a vacuum evaporationmethod, or the like. Alternatively, an Al—Zn—O-based film includingnitrogen, that is, an Al—Zn—O—N-based film, a Zn—O-based film includingnitrogen, or a Sn—Zn—O-based film including nitrogen may be used. Notethat the proportion (atomic %) of zinc in the Al—Zn—O—N-based film is 47atomic % or lower and is higher than that of aluminum in theAl—Zn—O—N-based film; the proportion (atomic %) of aluminum in theAl—Zn—O—N-based film is higher than that of nitrogen in theAl—Zn—O—N-based film. Such a material is etched with a hydrochloricacid-based solution. However, since a residue is easily generatedparticularly in etching of ITO, an indium oxide-tin oxide alloy(In₂O₃—ZnO) may be used to improve etching processability.

Note that the unit of the proportion of the components in thelight-transmitting conductive film is atomic percent, and the proportionof the components is evaluated by analysis using an electron probe X-raymicroanalyzer (EPMA).

Then, a fourth photolithography step is performed in which a resist maskis formed and an unnecessary portion of the conductive film is etchedaway to form the conductive layers 217 a to 217 c (see FIG. 6B.).

Through the above steps, a driver circuit portion can be manufactured.

In the manufacturing method of the driver circuit portion described withreference to FIGS. 5A to 5C and FIGS. 6A and 6B, the depletion typetransistor and the enhancement type transistor in a logic circuit in thedriver circuit, and the depletion type transistor, which is a switchingelement for discharging charge if charge builds up in a signal line oran element, electrode, or wiring which is electrically connected to thesignal line, can be manufactured by the same steps.

Note that in the manufacturing method of the driver circuit portiondescribed with reference to FIGS. 5A to 5C and FIGS. 6A and 6B, a resistmask may be formed by an ink jetting method. Formation of the resistmask by an ink jetting method does not use a photomask; thus,manufacturing cost can be reduced.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 3

In this embodiment, another example of a structure of the driver circuitportion in Embodiment 1 will be described.

An example of a structure of the driver circuit portion of thisembodiment will be described with reference to FIGS. 7A and 7B. FIGS. 7Aand 7B illustrate an example of the structure of the driver circuitportion in this embodiment. FIG. 7A is a top view and FIG. 7B is across-sectional view taken along line Z1-Z2 and line Z3-Z4 of FIG. 7A.

The driver circuit portion illustrated in FIGS. 7A and 7B includes, likethe driver circuit portion illustrated in FIGS. 2A and 2B, thetransistor 251, the transistor 252, and the transistor 253 over thesubstrate 201.

The transistor 251 and the transistor 252 are examples of an elementused in a logic circuit in the driver circuit 111 illustrated in FIG. 1and the equivalent circuit diagram of the transistors is illustrated inFIG. 3; therefore, a description thereof is omitted here. The transistor253 corresponds to the transistor 112 illustrated in FIG. 1. Next,structures of the transistors will be described.

The transistor 251 includes the gate electrode 211 a over the substrate201, the gate insulating layer 202 over the gate electrode 211 a, anoxide semiconductor layer 243 a over the gate electrode 211 a with thegate insulating layer 202 interposed therebetween, an oxidesemiconductor layer 263 a over the oxide semiconductor layer 243 a, andthe conductive layer 215 a and the conductive layer 215 b over parts ofthe oxide semiconductor layer 263 a.

The transistor 252 includes the gate electrode 211 b over the substrate201, the gate insulating layer 202 over the gate electrode 211 b, theoxide semiconductor layer 263 b over the gate electrode 211 b with thegate insulating layer 202 interposed therebetween, the conductive layer215 b and the conductive layer 215 c over parts of the oxidesemiconductor layer 263 b.

The transistor 253 includes the gate electrode 211 c over the substrate201, the gate insulating layer 202 over the gate electrode 211 c, anoxide semiconductor layer 243 b over the gate electrode 211 c with thegate insulating layer 202 interposed therebetween, an oxidesemiconductor layer 263 c over the oxide semiconductor layer 243 b, andthe conductive layer 215 b and the conductive layer 215 d over parts ofthe oxide semiconductor layer 263 c.

Each of the conductive layers 215 a to 215 d serves as a sourceelectrode or a drain electrode.

The oxide semiconductor layer 243 a, the oxide semiconductor layer 243b, and the oxide semiconductor layers 263 a to 263 c are subjected todehydration or dehydrogenation and an oxide insulating layer 207 isformed in contact with the oxide semiconductor layers 263 a to 263 c. Atransistor including such an oxide semiconductor layer as a channelformation layer has high reliability because a V-th shift due to along-term use or high load hardly occurs.

Note that a nitride insulating layer may be provided over the oxideinsulating layer 207. It is preferable that the nitride insulating layerbe in contact with the gate insulating layer 202 or an insulating layerserving as a base which is provided below the oxide insulating layer 207so as to block entry of impurities such as moisture, hydrogen ions, andOH⁻ from the vicinity of a side surface of the substrate. It isparticularly effective to use a silicon nitride layer as the gateinsulating layer 202 or the insulating layer serving as the base, whichis in contact with the oxide insulating layer 207. In other words, whenthe silicon nitride layers are provided over, under, and around theoxide semiconductor layer so as to surround the oxide semiconductorlayer, the reliability of the display device is improved.

A planarizing insulating layer can be provided over the oxide insulatinglayer 207 (over the nitride insulating layer if provided).

Over the oxide insulating layer 207 (over the nitride insulating layerif the nitride insulating layer is provided and the planarizinginsulating layer is not provided, or over the planarizing insulatinglayer if the planarizing insulating layer is provided), a firstconductive layer to a third conductive layer may be provided: the firstconductive layer may overlap with the oxide semiconductor layer 243 aand the oxide semiconductor layer 263 a with the oxide insulating layer207 interposed therebetween; the second conductive layer may overlapwith the oxide semiconductor layer 263 b with the oxide insulating layer207 interposed therebetween; and the third conductive layer may overlapwith the oxide semiconductor layer 243 b and the oxide semiconductorlayer 263 c with the oxide insulating layer 207 interposed therebetween.Each of the first to third conductive layers serves as a second gateelectrode. The same or different second gate voltages are applied to thefirst to third conductive layers, whereby the threshold voltages of thetransistors 251 to 253 can be controlled.

The thickness of the oxide semiconductor layer (a stack of the oxidesemiconductor layer 243 a and the oxide semiconductor layer 263 a) inthe transistor 251 is larger than the thickness of the oxidesemiconductor layer (the oxide semiconductor layer 263 b) in thetransistor 252. In addition, the thickness of the oxide semiconductorlayer (a stack of the oxide semiconductor layer 243 b and the oxidesemiconductor layer 263 c) in the transistor 253 is larger than thethickness of the oxide semiconductor layer (the oxide semiconductorlayer 263 b) in the transistor 252. As the thickness of the oxidesemiconductor layer increases, the absolute value of a negative voltagefor the gate electrode which is needed to fully deplete the oxidesemiconductor layer and to bring the transistor into an off stateincreases. As a result, a transistor including a thick oxidesemiconductor layer as a channel formation layer behaves as a depletiontype transistor.

As illustrated in the example in FIGS. 7A and 7B, the display device ofthis embodiment can include, by adjusting the thicknesses of the oxidesemiconductor layers, a driver circuit including a depletion typetransistor and an enhancement type transistor, and a depletion typetransistor for discharging charge if charge builds up in a signal lineor an element, electrode, or wiring which is electrically connected tothe signal line, over one substrate. Thus, charge build-up can bereduced. In addition, when a display device is formed using a bottomgate transistor, if charge builds up in a back channel portion, thebuilt up charge can be discharged to the reference voltage line througha signal line. Consequently, generation of a parasitic channel can besuppressed and leakage current can be reduced.

Alternatively, the display device of this embodiment may have astructure illustrated in FIG. 8. In the structure, an oxide conductivelayer 214 a and an oxide conductive layer 214 b which serve as a pair ofbuffer layers are provided over the oxide semiconductor layer 263 a, andthe conductive layer 215 a and the conductive layer 215 b which serve asa pair of electrodes are provided in contact with the oxide conductivelayer 214 a and the oxide conductive layer 214 b in the transistor 251;an oxide conductive layer 214 c and an oxide conductive layer 214 dwhich serve as a pair of buffer layers are provided over the oxidesemiconductor layer 263 b, and the conductive layer 215 b and theconductive layer 215 c which serve as a pair of electrodes are providedin contact with the oxide conductive layer 214 c and the oxideconductive layer 214 d in the transistor 252; and an oxide conductivelayer 214 e and an oxide conductive layer 214 f which serve as a pair ofbuffer layers are provided over the oxide semiconductor layer 263 c, andthe conductive layer 215 b and the conductive layer 215 d which serve asa pair of electrodes are provided in contact with the oxide conductivelayer 214 e and the oxide conductive layer 214 f in the transistor 253.

Each of the oxide conductive layers 214 a to 214 f has higherconductivity than the oxide semiconductor layers 243 a and 243 b, andthe oxide semiconductor layers 263 a to 263 c, and serves as a sourceregion or a drain region of the transistors 251 to 253.

As an oxide conductive film which is used for forming the oxideconductive layers 214 a to 214 f, a film of a conductive material thattransmits visible light, such as an In—Sn—O-based, In—Sn—Zn—O-based,In—Al—Zn—O-based, Sn—Ga—Zn—O-based, Al—Ga—Zn—O-based, Sn—Al—Zn—O-based,In—Zn—O-based, Sn—Zn—O-based, Al—Zn—O-based, In—O-based, Sn—O-based, orZn—O-based metal oxide may be used. The thickness of the oxideconductive film is set within the range of 1 nm to 300 nm inclusive, asappropriate. In the case of using a sputtering method, it is preferablethat film formation be performed with a metal oxide target includingSiO₂ at 2 wt % to 10 wt % inclusive so that SiO_(x) (x>0) which inhibitscrystallization is included in the light-transmitting conductive film sothat the light-transmitting conductive film may be prevented from beingcrystallized in heat treatment performed later for dehydration ordehydrogenation.

Further, if an In—Ga—Zn—O-based film is used as the oxide semiconductorlayer and the oxide conductive layer, for example, the oxidesemiconductor layer 243 a, the oxide semiconductor layer 243 b, and theoxide semiconductor layers 263 a to 263 c which serve as channelformation layers and the oxide conductive layers 214 a to 214 f whichserve as source regions and drain regions can be separately formed underdifferent film formation conditions.

For example, in the case of film formation by a sputtering method, theoxide conductive layers 214 a to 214 f, which are formed using an oxidesemiconductor film formed in an argon gas, have n-type conductivity andhave activation energy (ΔE) of 0.01 eV to 0.1 eV inclusive.

Note that in this embodiment, the oxide conductive layers 214 a to 214 fare In—Ga—Zn—O-based films and include at least amorphous components.Moreover, the oxide conductive layers 214 a to 214 f may include crystalgrains (nanocrystals). In that case, the crystal grains (nanocrystals)in the oxide conductive layers 214 a to 214 f have a diameter ofapproximately 1 nm to 10 nm, typically approximately 2 nm to 4 nm.

The oxide conductive layers 214 a to 214 f are not necessarily provided,but if the oxide conductive layers 214 a to 214 f are provided betweenthe oxide semiconductor layer 243 a, the oxide semiconductor layer 243b, and the oxide semiconductor layers 263 a to 263 c serving as channelformation layers and the conductive layers 215 a to 215 d serving assource electrodes and drain electrodes, good electrical junctions can beobtained and the transistors 251 to 253 can operate stably. Moreover,high mobility can be maintained at a high drain voltage.

Then, an example of a manufacturing method of the driver circuit portionillustrated in FIGS. 7A and 7B will be described with reference to FIGS.9A to 9C. FIGS. 9A to 9C are cross-sectional views of an example of amanufacturing method of the driver circuit portion illustrated in FIGS.7A and 7B.

First, as in the steps illustrated in FIG. 5A, the substrate 201 isprepared and a conductive film is formed over the substrate 201, then afirst photolithography step is performed in which a resist mask isformed over parts of the conductive film and the conductive film isetched using the resist mask to form the gate electrodes 211 a to 211 c.

Then, the resist mask is removed. The gate insulating layer 202 isformed over the gate electrodes 211 a to 211 c. Oxide semiconductorlayers having different thicknesses are formed over the gate insulatinglayer 202. In this embodiment, a thick oxide semiconductor layer isformed over the gate electrode 211 a with the gate insulating layer 202interposed therebetween, a thin oxide semiconductor layer is formed overthe gate electrode 211 b with the gate insulating layer 202 interposedtherebetween, and a thick oxide semiconductor layer is formed over thegate electrode 211 c with the gate insulating layer 202 interposedtherebetween. Note that in this embodiment, a method for forming anoxide semiconductor film to overlap with island-shaped oxidesemiconductor layers is described as an example of a method for forminga thick oxide semiconductor layer over the gate electrode 211 a and thegate electrode 211 c with the gate insulating layer 202 interposedbetween the thick oxide semiconductor layers and the gate electrodes.

First, a first oxide semiconductor film is formed. As the first oxidesemiconductor film, any of the following can be used: anIn—Ga—Zn—O-based film, an In—Sn—Zn—O-based oxide semiconductor film, anIn—Al—Zn—O-based oxide semiconductor film, a Sn—Ga—Zn—O-based oxidesemiconductor film, an Al—Ga—Zn—O-based oxide semiconductor film, aSn—Al—Zn—O-based oxide semiconductor film, an In—Zn—O-based oxidesemiconductor film, a Sn—Zn—O-based oxide semiconductor film, anAl—Zn—O-based oxide semiconductor film, an In—O-based oxidesemiconductor film, a Sn—O-based oxide semiconductor film, and aZn—O-based oxide semiconductor film. The first oxide semiconductor filmcan be formed by a sputtering method in a rare gas (typically, argon)atmosphere, an oxygen atmosphere, or a mixed atmosphere including a raregas (typically, argon) and oxygen. In the case of using a sputteringmethod, it is preferable that a film be formed with a target includingSiO₂ at 2 wt % to 10 wt % inclusive so that SiO_(x) (x>0) which inhibitscrystallization is included in the oxide semiconductor film so thatcrystallization of oxide semiconductor layers which are to be formedlater may be suppressed in heat treatment performed later fordehydration or dehydrogenation.

The oxide semiconductor is preferably an oxide semiconductor containingIn, more preferably an oxide semiconductor containing In and Ga. Inorder to make an oxide semiconductor layer i-type (intrinsic),dehydration or dehydrogenation is effective.

Here, the oxide semiconductor film is formed with use of an oxidesemiconductor target including In, Ga, and Zn (at a composition ratio ofIn₂O₃:Ga₂O₃:ZnO=1:1:1 [molar ratio]), under conditions where thedistance between the substrate and the target is 100 mm, the pressure is0.6 Pa, the direct current (DC) power supply is 0.5 kW, and theatmosphere is oxygen (the proportion of the oxygen flow is 100%). Notethat a pulse direct current (DC) power supply is preferable becausepowdery substances which are generated at the time of the film formationcan be reduced and the film thickness can be made uniform. In thisembodiment, an In—Ga—Zn—O-based film is formed using an In—Ga—Zn—O-basedoxide semiconductor target by a sputtering method as the first oxidesemiconductor film.

In this embodiment, the oxide semiconductor film is formed such that thetotal thickness of the first oxide semiconductor film and the secondoxide semiconductor film thereover is in the range of 50 nm to 100 nminclusive. Note that an appropriate thickness differs depending on anoxide semiconductor material, and the thickness may be set asappropriate depending on the material.

Note that before the first oxide semiconductor film is formed by asputtering method, powdery substances which are generated at the time ofthe film formation and attached to a surface of the gate insulatinglayer 202 are preferably removed by reverse sputtering in which an argongas is introduced and plasma is generated. The reverse sputtering refersto a method in which, without application of a voltage to a target side,an RF power source is used for application of a voltage to a substrateside in an argon atmosphere to generate plasma in the vicinity of thesubstrate so that a surface may be modified. Note that instead of anargon atmosphere, nitrogen, helium, oxygen, or the like may be used.

Then, by a second photolithography step, a resist mask is formed overparts of the first oxide semiconductor film and the first oxidesemiconductor film is etched using the resist mask, whereby the firstoxide semiconductor film is processed into islands to form the oxidesemiconductor layer 243 a and the oxide semiconductor layer 243 b (seeFIG. 9A). Note that after the second photolithography step, it ispreferable that the oxide semiconductor layer 243 a and the oxidesemiconductor layer 243 b be subjected to heat treatment (at 400° C. orhigher and lower than 750° C.) in an inert gas atmosphere (such asnitrogen, helium, neon, or argon) in order to remove impurities such ashydrogen and water from the layer, and then a second oxide semiconductorfilm be formed.

Then, the resist mask is removed. A second oxide semiconductor film isformed. For the second oxide semiconductor film, a material which is thesame as the material of the first oxide semiconductor film can be used.In this embodiment, an In—Ga—Zn—O-based film is formed. The second oxidesemiconductor film preferably has a thickness of 5 nm to 30 nminclusive. Note that an appropriate thickness differs depending on anoxide semiconductor material, and the thickness may be set asappropriate depending on the material.

Over the gate electrode 211 a, the second oxide semiconductor film isformed over the oxide semiconductor layer 243 a, and thus a thick oxidesemiconductor layer is formed. On the other hand, over the gateelectrode 211 b, the second oxide semiconductor film is formed incontact with the gate insulating layer 202, and thus a thin oxidesemiconductor layer is formed. Further, over the gate electrode 211 c,the second oxide semiconductor film is formed over the oxidesemiconductor layer 243 b, and thus a thick oxide semiconductor layer isformed.

Then, by a third photolithography step, a resist mask is formed overparts of the second oxide semiconductor film and the second oxidesemiconductor film is etched using the resist mask, whereby the secondoxide semiconductor film is processed into islands. An island-shapedthick oxide semiconductor layer in which the oxide semiconductor layer243 a and the oxide semiconductor layer 263 a are stacked is formed overthe gate electrode 211 a. An island-shaped thick oxide semiconductorlayer in which the oxide semiconductor layer 243 b and the oxidesemiconductor layer 263 c are stacked is formed over the gate electrode211 c. In addition, the oxide semiconductor layer 263 c is formed overthe gate electrode 211 b (see FIG. 9B).

Then, the resist mask is removed, and the oxide semiconductor layers aresubjected to dehydration or dehydrogenation. First heat treatment fordehydration or dehydrogenation is performed at a temperature of 400° C.or higher and lower than 750° C., preferably, 425° C. or higher andlower than 750° C. Note that in the case of the temperature of 425° C.or higher and lower than 750° C., the heat treatment time may be onehour or shorter, whereas in the case of the temperature lower than 425°C., the heat treatment time is longer than one hour. Here, the substrateover which the oxide semiconductor layers are formed is put into anelectric furnace which is one of heat treatment apparatuses and heattreatment is performed on the oxide semiconductor layers in a nitrogenatmosphere. After that, the oxide semiconductor layers are not exposedto air and water and hydrogen are prevented from being mixed into theoxide semiconductor layers again. In this embodiment, slow cooling isperformed from the heating temperature T at which the oxidesemiconductor layers are subjected to dehydration or dehydrogenation toa temperature low enough to prevent water from entering again,specifically to a temperature that is lower than the heating temperatureT by 100° C. or more, in a nitrogen atmosphere and in one furnace.Moreover, without limitation to a nitrogen atmosphere, dehydration ordehydrogenation is performed in a rare gas atmosphere such as helium,neon, or argon.

Note that the heat treatment apparatus is not limited to an electricfurnace, and for example, an RTA (rapid thermal annealing) apparatussuch as a GRTA (gas rapid thermal annealing) apparatus or an LRTA (lamprapid thermal annealing) apparatus can be used. An LRTA apparatus is anapparatus with which an object is heated by radiation of light (anelectromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high-pressuresodium lamp, or a high-pressure mercury lamp. A GRTA apparatus is anapparatus with which a gas is heated through thermal radiation of lightemitted from the above lamp and by light emitted from the lamp and theobject is heated by heat conduction from the heated gas. As the gas, aninert gas which does not react with the object to be processed by heattreatment, for example, nitrogen or a rare gas such as argon, is used.In addition, the LRTA apparatus and the GRTA apparatus may be providedwith not only a lamp but also a device which heats the object by heatconduction or thermal radiation from a heater such as a resistanceheater.

Note that in the first heat treatment, it is preferable that water,hydrogen, or the like be not contained in nitrogen or a rare gas such ashelium, neon, or argon. Alternatively, the purity of nitrogen or a raregas such as helium, neon, or argon which is introduced into the heattreatment apparatus is preferably 6N (99.9999%) or more, more preferably7N (99.99999%) or more (i.e., the impurity concentration is preferably 1ppm or less, more preferably 0.1 ppm or less).

Note that the oxide semiconductor layers become microcrystalline layersor polycrystalline layers by crystallization in some cases, depending onconditions of the first heat treatment or a material of the oxidesemiconductor layers. For example, the oxide semiconductor layers maycrystallize to become microcrystalline semiconductor layers having acrystallinity of 90% or more, or 80% or more. Further, depending onconditions of the first heat treatment and a material of the oxidesemiconductor layers, the oxide semiconductor layers may becomeamorphous oxide semiconductor layers containing no crystallinecomponent.

The oxide semiconductor layers are changed into oxygen-deficient andlow-resistance oxide semiconductor layers, i.e., n-type low-resistanceoxide semiconductor layers, after the first heat treatment. An oxidesemiconductor layers after the first heat treatment have a highercarrier concentration than the oxide semiconductor layers shortly afterthe formation and preferably have a carrier concentration of 1×10¹⁸/cm³or more.

Note that the gate electrode 211 a, the gate electrode 211 b, and thegate electrode 211 c may be crystallized into microcrystalline layers orpolycrystalline layers depending on the conditions of the first heattreatment or the material of the gate electrodes. For example, in thecase where indium oxide-tin oxide alloy layers are used as the gateelectrode 211 a, the gate electrode 211 b, and the gate electrode 211 c,they are crystallized by the first heat treatment at 450° C. for onehour, but in the case where indium oxide-tin oxide alloy layerscontaining silicon oxide are used as the gate electrode 211 a, the gateelectrode 211 b, and the gate electrode 211 c, they are notcrystallized.

The first heat treatment of the oxide semiconductor layer may beperformed on the oxide semiconductor film before being processed intothe island-shaped oxide semiconductor layers. In that case, after thefirst heat treatment, the substrate is taken out of the heat treatmentapparatus and subjected to the photolithography step.

Then, as in the steps illustrated in FIG. 5C, a conductive film forforming source electrodes and drain electrodes of transistors is formedover the gate insulating layer 202 and the oxide semiconductor layers263 a to 263 c. A third photolithography step is performed in which aresist mask is formed over parts of the conductive film, and theconductive film is etched using the resist mask to form the conductivelayers 215 a to 215 d. The resist mask is removed. Then, the oxideinsulating layer 207 is formed over the gate insulating layer 202 andthe oxide semiconductor layers 263 a to 263 c. At this stage, parts ofthe oxide semiconductor layers 263 a to 263 c are in contact with theoxide insulating layer 207.

Note that, after the formation of the oxide insulating layer 207, secondheat treatment (preferably, at 200° C. to 400° C. inclusive, forexample, at 250° C. to 350° C. inclusive) may be performed in an inertgas atmosphere or in a nitrogen gas atmosphere. For example, the secondheat treatment is performed at 250° C. for one hour in a nitrogenatmosphere. By the second heat treatment, portions of the oxidesemiconductor layers 263 a to 263 c are heated while being in contactwith the oxide insulating layer 207, and other portions of the oxidesemiconductor layers 263 a to 263 c are heated while being in contactwith the conductive layers 215 a to 215 d.

When the oxide semiconductor layers 263 a to 263 c whose resistance hasbeen lowered by the first heat treatment are subjected to the secondheat treatment while being in contact with the oxide insulating layer207, regions in contact with the oxide insulating layer 207 are broughtinto an oxygen-excess state. As a result, the oxide semiconductor layers263 a to 263 c are changed into i-type oxide semiconductor layers(high-resistance oxide semiconductor layers) in the depth direction fromthe regions in contact with the oxide insulating layer 207 as in thecase of FIG. 6A.

In the oxide semiconductor layer having a large thickness in which theoxide semiconductor layer 243 a and the oxide semiconductor layer 263 aare stacked and in the oxide semiconductor layer having a largethickness in which the oxide semiconductor layer 243 b and the oxidesemiconductor layer 263 c are stacked, a region having i-typeconductivity (having increased resistance) is formed from the interfacewith the oxide insulating layer 207 toward the gate insulating layer202. However, since the stack of the oxide semiconductor layer 243 a andthe oxide semiconductor layer 263 a and the stack of the oxidesemiconductor layer 243 b and the oxide semiconductor layer 263 c have alarge thickness, a change into i-type oxide semiconductor layers(high-resistance oxide semiconductor layers) does not proceed to thevicinity of the interface with the gate insulating layer 202, and anoxide semiconductor layer including a region whose resistance has beenlowered and remains low in a channel formation region is obtained.

In this manner, the transistors included in the driver circuit portiondescribed in this embodiment include oxide semiconductor layers aschannel formation layers and the oxide semiconductor layers include anincreased resistance (i-type conductivity) region in different portions.As a result, the transistors have different operating characteristics.

The transistor 251 has the thick oxide semiconductor layer as thechannel formation layer and the oxide semiconductor layer includes aportion whose resistance has been lowered and remains low. Thus, thetransistor 251 has a negative threshold voltage and behaves as adepletion type transistor. The transistor 252 has a thin oxidesemiconductor layer which is an oxide semiconductor layer having ani-type conductivity (having increased resistance) as the channelformation layer. Thus, the transistor 252 has a positive thresholdvoltage and behaves as an enhancement type transistor. Further, thetransistor 253 has the thick oxide semiconductor layer as the channelformation layer and the oxide semiconductor layer includes a portionwhose resistance has been lowered and remains low. Thus, the transistor253 has a negative threshold voltage and behaves as a depletion typetransistor.

Note that when a region where the conductive layers 215 a to 215 dformed using a metal conductive film are in contact with the stack ofthe oxide semiconductor layer 243 a and the oxide semiconductor layer263 a or the stack of the oxide semiconductor layer 243 b and the oxidesemiconductor layer 263 c is subjected to the second heat treatment,oxygen easily moves to the metal conductive film side and the oxidesemiconductor layers change into n-type. In the case where the oxidesemiconductor layer has a thickness of 30 nm or more, the vicinity ofthe interface with the metal conductive film changes to n-type, whereasthe underlying portion is i-type or becomes n-type.

Through the above steps, the driver circuit portion illustrated in FIGS.7A and 7B can be manufactured (see FIG. 9C).

In the manufacturing method of the driver circuit portion described withreference to FIGS. 5A to 5C and FIGS. 6A and 6B, the depletion typetransistor and the enhancement type transistor in a logic circuit in thedriver circuit, and the depletion type transistor for discharging chargeif charge builds up in a signal line or an element, electrode, or wiringwhich is electrically connected to the signal line can be manufacturedby the same steps. In addition, even in a display device usingtransistors including an oxide semiconductor, leakage current can bereduced.

Note that in the manufacturing method of the driver circuit portiondescribed with reference to FIGS. 9A to 9C, a resist mask may be formedby an ink jetting method. Formation of the resist mask by an ink jettingmethod does not use a photomask; thus, manufacturing cost can bereduced.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 4

In this embodiment, a sequential logic circuit which can be applied to adriver circuit in a display device which is one embodiment of thepresent invention will be described.

A circuit structure of a logic circuit including a combinational circuitwill be described with reference to FIG. 10. FIG. 10 is a circuitdiagram illustrating a circuit structure of the logic circuit in thisembodiment.

A logic circuit illustrated in FIG. 10 includes a transistor 611, aninverter 6121, an inverter 6122, an inverter 6123, and a transistor 613.

A first clock signal (also referred to as CL1) is input to a gate of thetransistor 611, and a first signal is input to one of a source and drainof the transistor 611. The signal input to one of the source and drainis referred to as an input signal and the voltage of the input signal isalso referred to as Vin.

An input terminal of the inverter 6121 is electrically connected to theother of the source and drain of the transistor 611.

An input terminal of the inverter 6122 is electrically connected to anoutput terminal of the inverter 6121.

An input terminal of the inverter 6123 is electrically connected to theoutput terminal of the inverter 6121. A second signal is output from anoutput terminal of the inverter 6121. A signal which is output from theinverter 6123 is also referred to as an output signal and the voltage ofthe output signal is referred to as Vout.

The logic circuit illustrated in FIG. 3 can be applied to each of theinverters 6121 to 6123.

A second clock signal (also referred to as CL2) is input to a gate ofthe transistor 613. One of a source and drain of the transistor 613 iselectrically connected to the other of the source and drain of thetransistor 611. The other of the source and drain of the transistor 613is electrically connected to an output terminal of the inverter 6122.

The first clock signal and the second clock signal each have two statesof a high state and a low state. A voltage of the clock signal in a highstate or substantially in a high state is referred to as VH and avoltage of the clock signal in a low state or substantially in a lowstate is referred to as VL.

The first clock signal and the second clock signal have opposite phases.For example, in a predetermined period, the second clock signal is lowwhen the first clock signal is high, whereas the second clock signal ishigh when the first clock signal is low.

Note that in this embodiment, the case is described in which the firstclock signal is input to the gate of the transistor 611 and the secondclock signal is input to the gate of the transistor 613; however, oneembodiment of the present invention is not limited thereto. A structurecan be employed in which the second clock signal is input to the gate ofthe transistor 611 and the first clock signal is input to the gate ofthe transistor 613.

Next, operation of the logic circuit illustrated in FIG. 10 will bedescribed with reference to FIG. 11. FIG. 11 is a timing diagramillustrating the operation of the logic circuit in FIG. 10.

The operation of the logic circuit illustrated in FIG. 10 is roughlydivided into four periods. Each period will be described below.

First, in a first period, as illustrated in FIG. 11, the first clocksignal is high and the second clock signal is low. Accordingly, thetransistor 611 is in an on state and the transistor 613 is in an offstate. In addition, the input signal is high and the voltage of theinput signal is VH.

At this time, since the transistor 611 is on, a voltage of a node 614(also referred to as V614) is VH. Since the voltage of the node 614 isapplied to the input terminal of the inverter 6121, a signal of VL isoutput from the inverter 6121, and a voltage of a node 615 (alsoreferred to as V615) is VL. Further, since the voltage of the node 615is applied to the input terminal of the inverter 6122, a signal of VH isoutput from the inverter 6122, but the voltage of the output signal fromthe inverter 6122 is not applied to the node 614 because the transistor613 is in an off state. The potential of the node 615 is also applied tothe input terminal of the inverter 6123, and therefore a signal of VH isoutput from the inverter 6123. The above is the operation in the firstperiod.

Then, in a second period, as illustrated in FIG. 11, the first clocksignal is low and the second clock signal is high. Accordingly, thetransistor 611 is in an off state and the transistor 613 is in an onstate. In addition, the input signal is low.

At this time, since the transistor 611 is in an off state, V614 is keptat VH even when the input signal is low. Since the potential of the node614 is applied to the input terminal of the inverter 6121, a signal ofVL is output from the inverter 6121, and V615 is kept at VL. Further,the potential of the node 615 is applied to the input terminal of theinverter 6122, and a signal of VH is output from the inverter 6122.Moreover, since the transistor 613 is in an on state, the potential ofthe signal from the inverter 6122 is applied to the node 614. Thepotential of the node 615 is also applied to the input terminal of theinverter 6123, and therefore a signal of VH is output from the inverter6123. The above is the operation in the second period.

Then, in a third period, as illustrated in FIG. 11, the first clocksignal is high and the second clock signal is low. Accordingly, thetransistor 611 is in an on state and the transistor 613 is in an offstate. In addition, Vin is kept at VL.

At this time, since the transistor 611 is in an on state, V614 is VL.Since the potential of the node 614 is applied to the input terminal ofthe inverter 6121, a signal of VH is output from the inverter 6121, andV615 is VH. Further, since the potential of the node 615 is applied tothe input terminal of the inverter 6122, a signal of VL is output fromthe inverter 6122, but the voltage of the output signal from theinverter 6122 is not applied to the node 614 because the transistor 613is in an off state. Moreover, the voltage of the node 615 is alsoapplied to the input terminal of the inverter 6123, so that a signal ofVL is output from the inverter 6123. The above is the operation in thethird period.

Then, in a fourth period, as illustrated in FIG. 11, the first clocksignal is low and the second clock signal is high. Accordingly, thetransistor 611 is in an off state and the transistor 613 is in an onstate. In addition, Vin is kept at VL.

At this time, since the transistor 611 is in an off state, V614 is keptat VL. When V614 is VL, a signal of VH is output from the inverter 6121,and V615 is kept at VH. Further, when V615 is VH, a signal of VL isoutput from the inverter 6122, and since the transistor 613 is in an onstate, the voltage of the signal from the inverter 6122 is applied tothe node 614. Moreover, the voltage of the node 615 is also applied tothe input terminal of the inverter 6123, and therefore a signal of VL isoutput from the inverter 6123. The above is the operation in the fourthperiod.

Through the above operation, the logic circuit illustrated in FIG. 10can generate an output signal based on a state of a signal inputthereto.

Embodiment 5

In this embodiment mode, a shift register circuit of one embodiment ofthe present invention will be described.

The shift register in this embodiment includes a plurality of logiccircuits, and the plurality of sequential logic circuits areelectrically connected in series. A specific structure will be describedwith reference to FIG. 12. FIG. 12 is a circuit diagram illustrating astructure of the shift register in this embodiment.

The shift register illustrated in FIG. 12 includes a logic circuit 3011,a logic circuit 3012, a logic circuit 3013, a NAND circuit 3140, a NANDcircuit 3141, a NAND circuit 3142, and a NAND circuit 3143. Note thatalthough FIG. 12 illustrates three (also referred to as three-stage)sequential logic circuits, one embodiment of the present invention isnot limited thereto and may include at least two-stage sequential logiccircuits.

In FIG. 12, a logic circuit included in the shift register includes, forexample, the logic circuit including the transistor 611 and thetransistor 613 which are described in Embodiment 4.

The logic circuit 3011 includes a transistor 3111, an inverter 3121A, aninverter 3122A, an inverter 3123A, and a transistor 3131. In the logiccircuit 3011, a first clock signal is input to a gate of the transistor3111, and a second clock signal is input to a gate of the transistor3131.

The logic circuit 3012 includes a transistor 3112, an inverter 3121B, aninverter 3122B, an inverter 3123B, and a transistor 3132. In the logiccircuit 3012, the second clock signal is input to a gate of thetransistor 3112, and the first clock signal is input to a gate of thetransistor 3132.

The logic circuit 3013 includes a transistor 3113, an inverter 3121C, aninverter 3122C, an inverter 3123C, and a transistor 3133. In the logiccircuit 3013, the first clock signal is input to a gate of thetransistor 3113, and the second clock signal is input to a gate of thetransistor 3133.

An output terminal of the inverter 3123A in the logic circuit 3011 iselectrically connected to one of a source and drain of the transistor3112 in the logic circuit 3012. An output terminal of the inverter 3123Bin the logic circuit 3012 is electrically connected to one of a sourceand drain of the transistor 3113 in the logic circuit 3013.

Further, in the logic circuit 3011, one of a source and drain of thetransistor 3111 is electrically connected to a first input terminal ofthe NAND circuit 3140, and the output terminal of the inverter 3123A iselectrically connected to a second input terminal of the NAND circuit3140 and to a first input terminal of the NAND circuit 3141. In thelogic circuit 3012, one of the source and drain of the transistor 3112is electrically connected to the second input terminal of the NANDcircuit 3140 and to the first input terminal of the NAND circuit 3141,and the output terminal of the inverter 3123B is electrically connectedto the second input terminal of the NAND circuit 3141 and to a firstinput terminal of the NAND circuit 3142. In the logic circuit 3013, oneof the source and drain of the transistor 3113 is electrically connectedto the second input terminal of the NAND circuit 3141 and to the firstinput terminal of the NAND circuit 3142, and an output terminal of theinverter 3123C is electrically connected to a second input terminal ofthe NAND circuit 3142 and to a first input terminal of the NAND circuit3143. Note that the connection point of the one of the source and drainof the transistor 3111 in the logic circuit 3011 and the first inputterminal of the NAND circuit 3140 is also referred to as a node 316.

Each of the NAND circuits 3140 to 3143 can be formed using transistorshaving the same conductivity type as the transistors included in thelogic circuits. By using transistors having the same conductivity type,the NAND circuits can be formed in the same process as the logiccircuits, and thus can be easily formed. A circuit structure of the NANDcircuit including transistors having the same conductivity type will bedescribed with reference to FIG. 13. FIG. 13 is a circuit diagramillustrating a circuit structure of the NAND circuit in this embodiment.

The NAND circuit illustrated in FIG. 13 includes a transistor 321, atransistor 322, and a transistor 323.

The transistor 321 is a depletion type transistor. One of a source anddrain of the transistor 321 is electrically connected to a power supplyline 325 and supplied with a high power supply voltage. A gate and theother of the source and drain of the transistor 321 are electricallyconnected to each other.

The transistor 322 is an enhancement type transistor. One of a sourceand drain of the transistor 322 is electrically connected to the otherof the source and drain of the transistor 321.

The transistor 323 is an enhancement type transistor. One of a sourceand drain of the transistor 323 is electrically connected to the otherof the source and drain of the transistor 322. The other of the sourceand drain of the transistor 323 is electrically connected to a powersupply line 324 and supplied with a low power supply voltage.

In the logic circuit in this embodiment, a first input signal is inputto a gate of the transistor 323, a second input signal is input to agate of the transistor 322, and a potential of a node 326 (also referredto as V326) between the transistor 321 and the transistor 322 is outputas an output signal.

Next, operation of the NAND circuit illustrated in FIG. 13 will bedescribed.

The operation of the NAND circuit in FIG. 13 can be classified into twocategories depending on whether at least one of a voltage of the firstinput signal (also referred to as Vin1) and a voltage of the secondinput signal (Vin2) is low or the voltages of the first and second inputsignals are high. Each case will be described below. Note that in thisembodiment, the case where data is 0 in a low state and data is 1 in ahigh state is described as an example; however, one embodiment of thepresent invention is not limited thereto, and data can be 1 in a lowstate and can be 0 in a high state.

In the case where Vin1=VH and Vin2=VL, the case where Vin1=VL andVin2=VH, or the case where Vin1=VL and Vin2=VL, one or both of thetransistors 322 and 323 are in an off state, and the resistance of thetransistors 322 and 323 (the resistance is also referred to asR322+R323) is higher than the resistance of the transistor 321 (alsoreferred to as R321), that is, R322+R323>R321; accordingly, V326 is VH,and a voltage of the output signal (also referred to as Vout) is VH.

Further, in the case where Vin1=VH and Vin2=VH, the transistors 321 and322 are in an on state, and R322+R323<R321; accordingly, V326 is VL andVout is VL. The above is the operation of the NAND circuit illustratedin FIG. 13.

As described above, when the NAND circuit is formed using transistors ofthe same conductivity type, it can be formed in the same process asanother logic circuit. Moreover, the circuit structure of one embodimentof the present invention is not limited to the structure in FIG. 13, andanother circuit structure can be employed if the same function can beprovided.

Next, operation of the shift register illustrated in FIG. 12 will bedescribed with reference to FIG. 14. FIG. 14 is a timing diagramillustrating the operation of the shift register in FIG. 12.

The operation of the shift register in this embodiment is classifiedinto ten periods as illustrated in FIG. 14. In a first period, apotential Vin of an input signal to the logic circuit 3011 is VH. In afirst period, a voltage Vin of an input signal to the logic circuit 3011is VH. In a second period and a third period, a voltage of a node 3171(also referred to as V3171) between the logic circuit 3011 and the logiccircuit 3012 is changed from VH to VL. Further, in the third period anda fourth period, a voltage of an output signal from the NAND circuit3140 is VH.

In the fourth period and a fifth period, a voltage of an input signal tothe logic circuit 3012 (an output signal from the logic circuit 3011) ischanged from VL to VH. In the fifth period and a sixth period, a voltageof a node 3172 (also referred to as V3172) between the logic circuit3012 and the logic circuit 3013 is changed from VH to VL. In the sixthperiod and a seventh period, a voltage of an output signal from the NANDcircuit 3141 is VH.

In the seventh period and an eighth period, a voltage of an input signalto the logic circuit 3013 (an output signal from the logic circuit 3012)is changed from VL to VH. In the eighth period and a ninth period, avoltage of a node 3173 (also referred to as V3173) between the logiccircuit 3013 and a next-stage logic circuit is changed from VH to VL. Inthe ninth period and a tenth period, a voltage of an output signal fromthe NAND circuit 3142 is VH.

When another logic circuit is connected to an output terminal of thelogic circuit 3013, a voltage of an input signal of the logic circuit ischanged from VL to VH in a given period and a voltage of an outputsignal of the logic circuit is changed into VH in another given periodas described above. Moreover, in a period where a voltage of the outputsignal from the logic circuit is VL, a voltage of an output signal fromthe NAND circuit 3143 is VH.

As described above, a shift register can be constituted by logiccircuits including TFTs including an oxide semiconductor. The TFTincluding an oxide semiconductor has higher mobility than a conventionalTFT including amorphous silicon; therefore, by applying the TFTincluding an oxide semiconductor to the shift register, the shiftregister can operate at high speed.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 6

In this embodiment, an example of a structure of a display device whichis one embodiment of the present invention will be described.

The display device which is one embodiment of the present invention canbe applied to a variety of display devices such as a liquid crystaldisplay device and an electroluminescent display device. A structure ofthe display device of this embodiment will be described with referenceto FIG. 15. FIG. 15 is a block diagram illustrating a structure of thedisplay device of this embodiment.

As illustrated in FIG. 15, the display device of this embodimentincludes a pixel portion 701, a scan line driver circuit 702, and asignal line driver circuit 703.

The pixel portion 701 includes a plurality of pixels 704 and has a dotmatrix structure. Specifically, the plurality of pixels 704 are arrangedin rows and columns. Each pixel 704 is electrically connected to thescan line driver circuit 702 through a scan line and electricallyconnected to the signal line driver circuit 703 through a signal line.Note that in FIG. 15, scan lines and signal lines are omitted forconvenience.

The scan line 105 illustrated in FIG. 1 and the signal line 103illustrated in FIG. 1, for example, may be employed. Further, the scanline 107 illustrated in FIG. 1 can also be controlled by the scan linedriver circuit which controls the scan line electrically connected tothe pixels.

The scan line driver circuit 702 is a circuit for selecting the pixel704 to which a data signal is input, and outputs a selection signal tothe pixel 704 through the scan line.

The signal line driver circuit 703 is a circuit for outputting datawritten to the pixel 704 as a signal, and outputs pixel data as a signalthrough the signal line to the pixel 704 selected by the scan linedriver circuit 702. In addition, the display device of this embodimentincludes a transistor which, like the transistor 112 illustrated in FIG.1, is electrically connected to the signal line and makes the signalline and the reference voltage line electrically connected during an onstate.

The pixel 704 includes at least a display element and a switchingelement. A liquid crystal element or a light-emitting element such as anEL element can be applied to the display element, for example. Atransistor can be applied to the switching element, for example.

Next, an example of structures of the scan line driver circuit 702 andthe signal line driver circuit 703 will be described with reference toFIGS. 16A and 16B. FIGS. 16A and 16B are block diagrams eachillustrating a structure of the driver circuit. FIG. 16A is a blockdiagram illustrating a structure of the scan line driver circuit. FIG.16B is a block diagram illustrating a structure of the signal linedriver circuit.

As illustrated in FIG. 16A, the scan line driver circuit 702 includes ashift register 900, a level shifter 901, and a buffer 902.

Signals such as a gate start pulse (GSP) and a gate clock signal (GCK)are input to the shift register 900, and selection signals aresequentially output from sequential logic circuits. Moreover, the shiftregister shown in Embodiment 2 can be applied to the shift register 900.

Further, as illustrated in FIG. 16B, the signal line driver circuit 703includes a shift register 903, a first latch circuit 904, a second latchcircuit 905, a level shifter 906, and a buffer 907.

A signal such as a start pulse (SSP) is input to the shift register 903,and selection signals are sequentially output from the sequential logiccircuits.

A data signal is input to the first latch circuit 904. The first latchcircuit can include, for example, one or a plurality of logic circuitsshown in the above embodiments.

The buffer 907 has a function of amplifying a signal and includes anoperational amplifier or the like. The buffer 907 can include, forexample, one or a plurality of logic circuits shown in the aboveembodiments.

The second latch circuit 905 can hold a latch (LAT) signal temporarilyand outputs the held latch signals at one time to the pixel portion 701in FIG. 15. This is referred to as line sequential driving. If thepixels perform dot sequential driving instead of the line sequentialdriving, the second latch circuit 905 is not required. The second latchcircuit 905 can include, for example, one or a plurality of logiccircuits shown in the above embodiments.

Next, operation of the display device illustrated in FIG. 15 will bedescribed.

First, a scan line is selected by the scan line driver circuit 702. Tothe pixel 704 connected to the selected scan line, a data signal isoutput from the signal line driver circuit 703 through a signal line bya signal input from the scan line driver circuit 702. Accordingly, datais written to the pixel 704 connected to the selected scan line, and thepixel 704 is brought into a display state. In the case where a pluralityof scan lines are provided, the scan lines are sequentially selected bythe scan line driver circuit 702, and data is written to all the pixels704. The above is the operation of the display device of thisembodiment.

The circuits in the display device illustrated in FIG. 15 can all beprovided over one substrate, or can be formed using transistors of thesame conductivity type. By providing the circuits over one substrate,the size of the display device can be reduced. By using transistors ofthe same conductivity type, the process can be simplified.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 7

In this embodiment, a liquid crystal display device will be described asan example of the display device shown in Embodiment 6.

An example of a circuit structure of a pixel in a display device in thisembodiment will be described with reference to FIG. 17. FIG. 17 is acircuit diagram illustrating a circuit structure of a pixel in thedisplay device in this embodiment.

As illustrated in FIG. 17, the pixel includes a transistor 821, a liquidcrystal element 822, and a capacitor 823.

The transistor 821 serves as a selection switch. A gate of thetransistor 821 is electrically connected to a scan line 804, and one ofa source and drain thereof is electrically connected to a signal line805.

The liquid crystal element 822 includes a first terminal and a secondterminal. The first terminal of the liquid crystal element 822 iselectrically connected to the other of the source and drain of thetransistor 821. A ground potential or a potential with a given value isapplied to the second terminal of the liquid crystal element 822. Theliquid crystal element 822 includes a first electrode which serves aspart of or the entire the first terminal, a second electrode whichserves as part of or the entire second terminal, and a layer includingliquid crystal molecules whose transmittance is changed by voltageapplication between the first electrode and the second electrode (such alayer is referred to as a liquid crystal layer).

The capacitor 823 includes a first terminal and a second terminal. Thefirst terminal of the capacitor 823 is electrically connected to theother of the source and drain of the transistor 821. The groundpotential or a potential with a given value is applied to the secondterminal of the capacitor 823. The capacitor 823 includes a firstelectrode which serves as part of or the entire first terminal, a secondelectrode which serves as part of or the entire second terminal, and adielectric layer. The capacitor 823 functions as a storage capacitor ofthe pixel. Note that although the capacitor 823 is not necessarilyprovided, the provision of the capacitor 823 can reduce adverse effectsof leakage current of the transistor 821.

Note that for the display device in this embodiment, a TN (twistednematic) mode, an IPS (in-plane-switching) mode, an FFS (fringe fieldswitching) mode, an MVA (multi-domain vertical alignment) mode, a PVA(patterned vertical alignment) mode, an ASM (axially symmetric alignedmicro-cell) mode, an OCB (optically compensated birefringence) mode, anFLC (ferroelectric liquid crystal) mode, an AFLC (antiferroelectricliquid crystal) mode, or the like can be employed.

Alternatively, liquid crystal exhibiting a blue phase for which analignment film is unnecessary may be used. A blue phase is one of liquidcrystal phases, which is generated just before a cholesteric phasechanges into an isotropic phase while the temperature of cholestericliquid crystal is increased. Since the blue phase appears only within anarrow range of temperature, a liquid crystal composition containing achiral agent at 5 wt % or more in order to improve the temperature rangeis used for the liquid crystal layer. The liquid crystal compositionwhich includes liquid crystal exhibiting a blue phase and a chiral agenthas a small response time of 10 μs to 100 μs, has optical isotropy,which makes the alignment process unnecessary, and has a small viewingangle dependence.

Next, operation of the pixel illustrated in FIG. 17 will be described.

First, a pixel to which data is written is selected, and the transistor821 in the selected pixel is turned on by a signal input from the scanline 804.

At this time, a data signal from the signal line 805 is input throughthe transistor 821, so that the first terminal of the liquid crystalelement 822 has the same voltage as the data signal, and thetransmittance of the liquid crystal element 822 is set depending onvoltage applied between the first terminal and the second terminal.After data writing, the transistor 821 is turned off by a signal inputfrom the scan line 804, the transmittance of the liquid crystal element822 is maintained during a display period, and the pixel is brought intoa display state. The above operation is sequentially performed for thescan lines 804, and the above operation is performed in all the pixels.The above is the operation of the pixel.

In displaying moving images, a liquid crystal display device has aproblem that a long response time of liquid crystal molecules causesafterimages or motion blur. In order to improve the moving-imagecharacteristics of a liquid crystal display device, a driving methodcalled black insertion is employed in which black is displayed on thewhole screen every other frame period.

Further, a driving method called double-frame rate driving may beemployed in which a vertical synchronizing frequency is set 1.5 times ormore, preferably, 2 times or more as high as a usual verticalsynchronizing frequency to improve the response speed.

Further, in order to improve the moving-image characteristics of aliquid crystal display device, a driving method may be employed in whicha plurality of LED (light-emitting diodes) light sources or a pluralityof EL light sources are used to form a surface light source as abacklight, and each light source of the surface light source isindependently driven in a pulsed manner in one frame period. As thesurface light source, three or more kinds of LEDs may be used or an LEDemitting white light may be used. Since a plurality of LEDs can becontrolled independently, the timing at which the LED emits light can besynchronized with the timing at which the liquid crystal layer isoptically modulated. In this driving method, part of the LEDs can beturned off; therefore, an effect of reducing power consumption can beobtained particularly in the case of displaying an image having a largeblack part.

By combining these driving methods, the display characteristics of aliquid crystal display device, such as moving-image characteristics, canbe improved as compared to those of conventional liquid crystal displaydevices.

Next, a structure of a display device in this embodiment which includesthe above pixel will be described with reference to FIGS. 18A and 18B.FIGS. 18A and 18B illustrate a structure of the pixel in the displaydevice in this embodiment. FIG. 18A is a top view, and FIG. 18B is across-sectional view. Note that dotted lines A1-A2 and B1-B2 in FIG. 18Acorrespond to cross sections A1-A2 and B1-B2 in FIG. 18B, respectively.

As illustrated in FIGS. 18A and 18B, the display device in thisembodiment includes, in the cross section of A1-A2, a gate electrode2001 over a substrate 2000; an insulating film 2002 provided over thegate electrode 2001; an oxide semiconductor layer 2003 provided over theinsulating film 2002; a pair of electrodes 2005 a and 2005 b providedover the oxide semiconductor layer 2003; an oxide insulating layer 2007provided over the electrodes 2005 a and 2005 b and the oxidesemiconductor layer 2003; and an electrode 2020 which is in contact withthe electrode 2005 b through an opening provided in the oxide insulatinglayer 2007.

Moreover, the display device includes, in the cross section of B1-B2, anelectrode 2008 over the substrate 2000; the insulating film 2002 overthe electrode 2008; the oxide insulating layer 2007 provided over theinsulating film 2002; and the electrode 2020 provided over the oxideinsulating layer 2007.

Electrodes 2022 and 2029 and electrodes 2023, 2024, and 2028 serve as awiring or an electrode for connection with an FPC.

As the transistor in this embodiment, for example, the transistor 252illustrated in FIGS. 2A and 2B can be used, and therefore a detaileddescription thereof is omitted here.

The electrodes 2020, 2022 and 2028 are formed using indium oxide(In₂O₃), an indium oxide-tin oxide alloy (In₂O₃—SnO₂, referred to asITO), or the like by a sputtering method, a vacuum evaporation method,or the like. Such a material is etched with a hydrochloric acid-basedsolution. However, since a residue is easily generated particularly inetching of ITO, an indium oxide-zinc oxide alloy (In₂O₃—ZnO) may be usedto improve etching processability.

FIGS. 19A1 and 19A2 are a cross-sectional view and a top view of a gatewiring terminal portion, respectively. FIG. 19A1 is a cross-sectionalview taken along line C1-C2 in FIG. 19A2. In FIG. 19A1, a transparentconductive film 2055 formed over a protective insulating film 2054 is aterminal electrode for connection which serves as an input terminal.Further, in FIG. 19A1, in the terminal portion, a first terminal 2051which is formed of the same material as a gate wiring and a connectionelectrode 2053 which is formed of the same material as a source wiringoverlap with each other with a gate insulating layer 2052 therebetweenand are electrically connected through the transparent conductive film2055. Moreover, the connection electrode 2053 and the transparentconductive film 2055 are electrically connected through a contact holeprovided in the protective insulating film 2054.

FIGS. 19B1 and 19B2 are a cross-sectional view and a top view of asource wiring terminal portion, respectively. FIG. 19B1 is across-sectional view taken along line D1-D2 in FIG. 19B2. In FIG. 19B1,the transparent conductive film 2055 formed over the protectiveinsulating film 2054 is a terminal electrode for connection which servesas an input terminal. Further, in FIG. 19B1, in the terminal portion, anelectrode 2056 which is formed of the same material as the gate wiringis placed below a second 10 terminal 2050 which is electricallyconnected to the source wiring, so as to overlap with the secondterminal 2050 with the gate insulating layer 2052 interposedtherebetween. The electrode 2056 is not electrically connected to thesecond terminal 2050. When the electrode 2056 is set to have a potentialdifferent from that of the second terminal 2050, for example, a floatingpotential, GND, or 0 V, a capacitor for preventing noise or staticelectricity can be formed. Further, the second terminal 2050 iselectrically connected to the transparent conductive film 2055 through acontact hole provided in the protective insulating film 2054.

A plurality of gate wirings, source wirings, and capacitor wirings areprovided depending on the pixel density. Moreover, a plurality of firstterminals at the same potential as the gate wiring, a plurality ofsecond terminals at the same potential as the source wiring, a pluralityof third terminals at the same potential as the capacitor wiring, andthe like are arranged in the terminal portion. The number of each of theterminals can be a given number and is determined as appropriate by apractitioner.

Accordingly, a pixel TFT portion including a bottom-gate n-channel TFT,and a storage capacitor can be completed. Then, they are arranged in amatrix corresponding to respective pixels so that a pixel portion isformed; thus, one of substrates for manufacturing an active matrixdisplay device can be formed. In this specification, such a substrate isreferred to as an active matrix substrate for convenience.

In the case of manufacturing an active matrix liquid crystal displaydevice, an active matrix substrate and a counter substrate provided witha counter electrode are fixed to each other with a liquid crystal layerinterposed therebetween. Note that a common electrode electricallyconnected to the counter electrode on the counter substrate is providedover the active matrix substrate, and a fourth terminal electricallyconnected to the common electrode is provided in the terminal portion.The fourth terminal is provided so that the common electrode is set to afixed potential such as GND or 0 V.

The n-channel transistor obtained in this embodiment uses theIn—Ga—Zn—O-based film as a channel formation layer and thus hasfavorable dynamic characteristics. Accordingly, these driving methodscan be applied in combination with the n-channel transistor of thisembodiment.

In the case of manufacturing a light-emitting display device, in orderto set one electrode (also referred to as a cathode) of an organiclight-emitting element to have a low power supply voltage, for example,GND or 0 V, a fourth terminal for making the cathode have the low powersupply voltage such as GND or 0 V is provided in a terminal portion.Moreover, when the light-emitting display device is formed, a powersupply line is provided in addition to a source wiring and a gatewiring. Accordingly, a fifth terminal electrically connected to thepower supply line is provided in the terminal portion.

With the use of TFTs including an oxide semiconductor in a gate linedriver circuit or a source line driver circuit, manufacturing cost isreduced. Moreover, by directly connecting a gate electrode of the TFTused in the driver circuit with a source wiring or a drain wiring, thenumber of contact holes can be reduced, so that a display device inwhich an area occupied by the driver circuit is reduced can be provided.

Therefore, according to this embodiment, a highly reliable displaydevice with excellent electric characteristics can be provided at lowcost.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 8

In this embodiment, a light-emitting display device will be described asan example of the display device shown in Embodiment 6. As an example, alight-emitting display device in which electroluminescence is used for alight-emitting element will be described in this embodiment.

Light-emitting elements utilizing electroluminescence are classifiedaccording to whether the light-emitting material is an organic compoundor an inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

In an organic EL element, by application of a voltage to alight-emitting element, electrons and holes are separately injected froma pair of electrodes into a layer containing a light-emitting organiccompound, and current flows. Then, the carriers (electrons and holes)recombine, so that light is emitted. Owing to such a mechanism, thislight-emitting element is referred to as a current-excitationlight-emitting element.

The inorganic EL elements are classified according to their elementstructures into a dispersion-type inorganic EL element and a thin-filminorganic EL element. A dispersion-type inorganic EL element has alight-emitting layer where particles of a light-emitting material aredispersed in a binder, and its light emission mechanism isdonor-acceptor recombination type light-emission that utilizes a donorlevel and an acceptor level. A thin-film inorganic EL element has astructure where a light-emitting layer is sandwiched between dielectriclayers, which are further sandwiched between electrodes, and its lightemission mechanism is localized type light-emission that utilizesinner-shell electron transition of metal ions. Note that here, anorganic EL element will be described as a light-emitting element.

A circuit structure of a pixel in a display device in this embodimentwill be described with reference to FIG. 20. FIG. 20 is a circuitdiagram illustrating a circuit structure of a pixel of the displaydevice in this embodiment.

As illustrated in FIG. 20, the pixel of the display device in thisembodiment includes a transistor 851, a capacitor 852 which serves as astorage capacitor of the pixel, a transistor 853, and a light-emittingelement 854.

A gate of the transistor 851 is electrically connected to a scan line855, and one of a source and drain of the transistor 851 is electricallyconnected to a signal line 856.

The capacitor 852 includes a first terminal and a second terminal. Thefirst terminal of the capacitor 852 is electrically connected to theother of the source and drain of the transistor 851. A high power supplyvoltage is supplied to the second terminal of the capacitor 852.

A gate of the transistor 853 is electrically connected to the other ofthe source and drain of the transistor 851. The high power supplyvoltage is applied to one of a source and drain of the transistor 853.

The light-emitting element 854 includes a first terminal and a secondterminal. The first terminal is electrically connected to the other ofthe source and drain of the transistor 853. A low power supply voltageis applied to the second terminal.

Next, operation of the pixel illustrated in FIG. 20 will be described.

First, a pixel to which data is written is selected. In the selectedpixel, the transistor 851 is turned on by a scan signal input from thescan line 855, and a video signal (also referred to as a data signal),which has a fixed voltage, is input from the signal line 856 to the gateof the transistor 853.

The transistor 853 is turned on or off depending on a voltage inresponse to the data signal input to the gate. When the transistor 853is on, a voltage applied between the first terminal and the secondterminal of the light-emitting element 854 depends on a gate voltage ofthe transistor 853 and the high power supply voltage. At this time,current flows through the light-emitting element 854 depending on thevoltage applied between the first terminal and the second terminal, andthe light-emitting element 854 emits light with luminance correspondingto the amount of current flowing between the first terminal and thesecond terminal. Further, since the gate voltage of the transistor 853is held for a certain period by the capacitor 852, the light-emittingelement 854 maintains a light-emitting state for a certain period.

When the data signal input from the signal line 856 to the pixel isdigital, the pixel enters a light-emitting state or a non-light-emittingstate by switching on and off of the transistor. Accordingly, grayscalecan be expressed by an area ratio grayscale method or a time ratiograyscale method. An area ratio grayscale method refers to a drivingmethod in which one pixel is divided into a plurality of subpixels andeach of the subpixels with the circuit structure illustrated in FIG. 20is independently driven in accordance with a data signal so thatgrayscale is expressed. A time ratio grayscale method refers to adriving method in which a period during which a pixel is in alight-emitting state is controlled so that grayscale is expressed.

Since the response speed of light-emitting elements is higher than thatof liquid crystal elements or the like, the light-emitting elements aresuitable for a time ratio grayscale method as compared to the liquidcrystal elements. Specifically, when a time ratio grayscale method isemployed for display, one frame period is divided into a plurality ofsubframe periods. Then, in accordance with video signals, thelight-emitting element in the pixel is set in a light-emitting state ora non-light-emitting state in each subframe period. By dividing oneframe period into a plurality of subframe periods, the total length of aperiod in which pixels actually emit light in one frame period can becontrolled with video signals, whereby and grayscale can be expressed.

Among driver circuits in the light-emitting display device, part of thedriver circuits which can be formed using n-channel TFTs can be formedover a substrate where TFTs in a pixel portion are formed. Moreover, asignal line driver circuit and a scan line driver circuit can be formedusing only n-channel TFTs.

Next, structures of a light-emitting element are described withreference to FIGS. 21A to 21C. A cross-sectional structure of a pixel isdescribed here by taking an n-channel driver TFT as an example. TFTs7001, 7011, and 7021, which are driving TFTs used in display devices inFIGS. 21A, 21B, and 21C respectively, can be formed in a manner similarto the manner of forming the enhancement-type TFTs shown in the aboveembodiments. The TFTs include an oxide semiconductor layer as asemiconductor layer, and have high reliability.

In order to extract light emitted from the light-emitting element, atleast one of an anode and a cathode should be transparent. There arefollowing structures of a light-emitting element which is formed overthe same substrate as a TFT: a top-emission structure in which light isextracted through the surface opposite to the substrate, abottom-emission structure in which tight is extracted through thesurface of the substrate, and a dual-emission structure in which lightis extracted through the surface opposite to the substrate and thesurface of the substrate. The pixel structure of the present inventioncan be applied to a light-emitting element having any of these emissionstructures.

A light-emitting element having a top-emission structure will bedescribed with reference to FIG. 21A.

FIG. 21A is a cross-sectional view of a pixel in the case where thedriver TFT 7001 is of an n-type and light is emitted from alight-emitting element 7002 through an anode 7005. In FIG. 21A, acathode 7003 of the light-emitting element 7002 is electricallyconnected to the driver TFT 7001, and a light-emitting layer 7004 andthe anode 7005 are stacked in this order over the cathode 7003. Thecathode 7003 can be formed using any of materials which has a low workfunction and a conductive film of which reflects light. For example, Ca,Al, CaF, MgAg, or AlLi is preferably used. The light-emitting layer 7004may be formed as a single layer or a stack of plural layers. When thelight-emitting layer 7004 is formed as a stack of plural layers, thelight-emitting layer 7004 is formed by stacking an electron-injectionlayer, an electron-transport layer, a light-emitting layer, ahole-transport layer, and a hole-injection layer in this order over thecathode 7003. Note that not all of these layers need to be provided aslong as the light-emitting layer is provided. The anode 7005 is formedof a light-transmitting conductive material. For example, the anode 7005may be formed using a light-transmitting conductive film of indium oxideincluding tungsten oxide, indium zinc oxide including tungsten oxide,indium oxide including titanium oxide, indium tin oxide includingtitanium oxide, indium tin oxide (hereinafter referred to as ITO),indium zinc oxide, or indium tin oxide to which silicon oxide is added.

The light-emitting element 7002 corresponds to a region where thelight-emitting layer 7004 is sandwiched between the cathode 7003 and theanode 7005. In the pixel illustrated in FIG. 21A, light is emitted fromthe light-emitting element 7002 to the anode 7005 side as indicated byan arrow.

Next, a light-emitting element having a bottom-emission structure willbe described with reference to FIG. 21B. FIG. 21B is a cross-sectionalview of a pixel in the case where the driver TFT 7011 is of an n-typeand light is emitted from a light-emitting element 7012 through acathode 7013. In FIG. 21B, the cathode 7013 of the light-emittingelement 7012 is formed over a light-transmitting conductive film 7017which is electrically connected to the driver TFT 7011, and alight-emitting layer 7014 and an anode 7015 are stacked in this orderover the cathode 7013. Note that a blocking film 7016 for reflecting orblocking light may be formed so as to cover the anode 7015 when theanode 7015 has a light-transmitting property. For the cathode 7013, anyof conductive materials which has a low work function can be used as inthe case of FIG. 21A. Note that the cathode 7013 is formed with athickness with which the cathode 7013 transmits light (preferably,approximately 5 nm to 30 nm). For example, an aluminum film with athickness of 20 nm can be used as the cathode 7013. Similarly to thecase of FIG. 21A, the light-emitting layer 7014 may be formed usingeither a single layer or a stack of plural layers. The anode 7015 is notrequired to transmit light, but can be formed of a light-transmittingconductive material as in the case of FIG. 21A. As the blocking film7016, a metal film which reflects light can be used for example;however, it is not limited to a metal film. For example, a resin towhich a black pigment is added can also be used.

The light-emitting element 7012 corresponds to a region where thelight-emitting layer 7014 is sandwiched between the cathode 7013 and theanode 7015. In the pixel illustrated in FIG. 21B, light is emitted fromthe light-emitting element 7012 to the cathode 7013 side as indicated byan arrow.

Next, a light-emitting element having a dual-emission structure will bedescribed with reference to FIG. 21C. In FIG. 21C, the cathode 7023 ofthe light-emitting element 7022 is formed over a light-transmittingconductive film 7027 which is electrically connected to the driver TFT7021, and a light-emitting layer 7024 and an anode 7025 are stacked inthis order over the cathode 7023. For the cathode 7023, any ofconductive materials which has a low work function can be used as in thecase of FIG. 21A. Note that the cathode 7023 is formed with a thicknesswith which the cathode 7023 transmits light. For example, an aluminumfilm with a thickness of 20 nm can be used as the cathode 7023.Similarly to the case of FIG. 21A, the light-emitting layer 7024 may beformed using either a single layer or a stack of plural layers. Theanode 7025 can be formed of a light-transmitting conductive material asin the case of FIG. 21A.

The light-emitting element 7022 corresponds to a region where the anode7025, the light-emitting layer 7024 and the cathode 7023 overlap witheach other. In the pixel illustrated in FIG. 21C, light is emitted fromthe light-emitting element 7022 to both the anode 7025 side and thecathode 7023 side as indicated by arrows.

Although an organic EL element is described here as a light-emittingelement, an inorganic EL element can alternatively be provided as alight-emitting element.

Although the example in which a thin film transistor (also referred toas a driver TFT) which controls the driving of a light-emitting elementis electrically connected to the light-emitting element has beendescribed, a structure may be employed in which a TFT for currentcontrol is connected between the driver TFT and the light-emittingelement.

Next, an appearance and a cross section of a display device (alsoreferred to as a light-emitting panel) of this embodiment will bedescribed with reference to FIGS. 22A and 22B. FIG. 22A is a plan viewof a panel in which a TFT and a light-emitting element formed over afirst substrate are sealed between the first substrate and a secondsubstrate with a sealant. FIG. 22B is a cross-sectional view taken alongline H-I in FIG. 22A.

A sealant 4505 is provided so as to surround a pixel portion 4502,signal line driver circuits 4503 a and 4503 b, and scan line drivercircuits 4504 a and 4504 b, which are provided over a first substrate4501. In addition, a second substrate 4506 is provided over the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b. Accordingly, the pixelportion 4502, the signal line driver circuits 4503 a and 4503 b, and thescan line driver circuits 4504 a and 4504 b are sealed together with afiller 4507, by the first substrate 4501, the sealant 4505, and thesecond substrate 4506. It is preferable that a panel be thus packaged(sealed) with a protective film (such as a bonding film or anultraviolet curable resin film) or a cover material with highair-tightness and little degasification so that the pixel portion 4502,the signal line driver circuits 4503 a and 4503 b, the scan line drivercircuits 4504 a and 4504 b, and the like are not exposed to air.

The pixel portion 4502, the signal line driver circuits 4503 a and 4503b, and the scan line driver circuits 4504 a and 4504 b which are formedover the first substrate 4501 each include a plurality of TFTs. A TFT4510 included in the pixel portion 4502 and a TFT 4509 and a TFT 4555included in the signal line driver circuit 4503 a are illustrated as anexample in FIG. 22B.

As the TFTs 4509, 4510, and 4555, any of the highly reliable transistorsincluding an oxide semiconductor layer as a semiconductor layer whichare described in Embodiment 2 and Embodiment 3 can be employed. In thisembodiment, the TFTs 4509, 4510, and 4555 are n-channel TFTs. Inaddition, an insulating layer 4542 is formed over the TFTs 4509, 4510,and 4555; an insulating layer 4544 is formed over the insulating layer4542; and a conductive layer 4540 is provided over the TFT 4509 with theinsulating layer 4542 and the insulating layer 4544 interposedtherebetween. The conductive layer 4540 serves as a second gateelectrode. In addition, an insulating layer 4545, an insulating layer4543 and an insulating layer 4546 are formed over the insulating layer4544.

The display device illustrated in FIGS. 22A and 22B includes alight-emitting element 4511. The light-emitting element 4511 has astacked-layer structure including a first electrode 4517, anelectroluminescent layer 4512, and a second electrode 4513, but thestructure is not limited to the structure in this embodiment. The firstelectrode 4517 is electrically connected to a source electrode or drainelectrode 4548 of the TFT 4510. Note that the structure of thelight-emitting element 4511 can be changed as appropriate depending on adirection in which light is extracted from the light-emitting element4511, or the like.

A partition 4520 is formed using an organic resin film, an inorganicinsulating film, or organic polysiloxane. It is particularly preferablethat the partition 4520 be formed of a photosensitive material to havean opening over the first electrode 4517, and a sidewall of the openingis formed as an inclined surface with a continuous curvature.

The electroluminescent layer 4512 may be formed using either a singlelayer or a stack of plural layers.

Note that in order to prevent entry of oxygen, hydrogen, moisture,carbon dioxide, or the like into the light-emitting element 4511, aprotective layer may be formed over the second electrode 4513 and thepartition 4520. As the protective layer, a silicon nitride film, asilicon nitride oxide film, a DLC film, or the like can be formed.

In addition, a variety of signals and voltages are supplied from FPCs4518 a and 4518 b to the signal line driver circuits 4503 a and 4503 b,the scan line driver circuits 4504 a and 4504 b, or the pixel portion4502.

In this embodiment, a connection terminal electrode 4515 is formed usingthe same conductive film as the first electrode 4517 included in thelight-emitting element 4511, and a terminal electrode 4516 is formedusing the same conductive film as the source and drain electrodesincluded in the TFTs 4509, 4510, and 4555.

The connection terminal electrode 4515 is electrically connected to aterminal included in the FPC 4518 a via an anisotropic conductive film4519.

The second substrate located in the direction in which light isextracted from the light-emitting element 4511 needs to have alight-transmitting property. In that case, a light-transmitting materialsuch as a glass plate, a plastic plate, a polyester film, or an acrylicfilm is used.

As the filler 4507, an ultraviolet curable resin or a thermosettingresin can be used as well as an inert gas such as nitrogen or argon. Forexample, poly(vinyl chloride) (PVC), acrylic, polyimide, an epoxy resin,a silicone resin, poly(vinyl butyral) (PVB), or ethylene with vinylacetate (EVA) can be used. In this embodiment, nitrogen may be used asthe filler.

If needed, an optical film such as a polarizing plate, a circularlypolarizing plate (including an elliptically polarizing plate), aretardation plate (a quarter-wave plate or a half-wave plate), or acolor filter may be provided as appropriate on an emission surface ofthe light-emitting element. Further, the polarizing plate or thecircularly polarizing plate may be provided with an anti-reflectionfilm. For example, anti-glare treatment by which reflected light can bediffused by projections and depressions of the surface so as to reducethe glare can be performed.

As the signal line driver circuits 4503 a and 4503 b and the scan linedriver circuits 4504 a and 4504 b, driver circuits formed by using asingle crystal semiconductor film or a polycrystalline semiconductorfilm over a substrate separately prepared may be mounted. Alternatively,only the signal line driver circuits or a part thereof, or only the scanline driver circuits or a part thereof may be separately formed and thenmounted. This embodiment is not limited to the structure illustrated inFIGS. 22A and 22B.

Through the above steps, a highly reliable light-emitting device (adisplay panel) can be manufactured.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 9

In this embodiment, an electronic paper will be described as an exampleof the display device in Embodiment 6.

The logic circuit shown in the above embodiments can be used in anelectronic paper. An electronic paper is also referred to as anelectrophoretic display device (also referred to as an electrophoreticdisplay) and has advantages of having high readability which isequivalent to normal paper and lower power consumption than otherdisplay devices, and being thin and lightweight.

There are a variety of modes of electrophoretic displays. Theelectrophoretic display includes a plurality of microcapsules dispersedin a solvent or a solute; each microcapsule containing first particleswhich are positively charged and second particles which are negativelycharged. When electric field is applied to the microcapsules, theparticles in the microcapsules move in opposite directions to each otherand only the color of the particles gathered on one side is displayed.Note that the first particles or the second particles include a pigment,and do not move without an electric field. The first particles and thesecond particles have different colors (which may be colorless).

Thus, the electrophoretic display utilizes a so-called dielectrophoreticeffect, in which a substance with high dielectric constant moves to aregion with a high electric field. The electrophoretic display does notneed to use a polarizing plate and a counter substrate, which arerequired in a liquid crystal display device, and therefore the thicknessand weight of the electrophoretic display device can be reduced.

A solution in which the above microcapsules are dispersed in a solventis referred to as electronic ink. Electronic ink can be printed on asurface of glass, plastic, fabric, paper, or the like. Furthermore, byuse of a color filter or particles that have a pigment, color displaycan also be achieved.

In addition, if a plurality of above microcapsules are arranged asappropriate over an active matrix substrate so as to be interposedbetween two electrodes, an active matrix display device can becompleted. Images can be displayed by application of an electric fieldto the microcapsules. For example, an active matrix substrate formedusing the enhancement type TFT exemplified in the above embodiments canbe used.

Note that the first particles and the second particles in themicrocapsules may be formed from any one of a conductive material, aninsulating material, a semiconductor material, a magnetic material, aliquid crystal material, a ferroelectric material, an electroluminescentmaterial, an electrochromic material, and a magnetophoretic material, orformed from a composite material thereof.

Next, an example of a structure of an electronic paper in thisembodiment will be described with reference to FIG. 23. FIG. 23 is across-sectional view illustrating a structure of an electronic paper inthis embodiment.

The electronic paper illustrated in FIG. 23 includes a TFT 581 over asubstrate 580; insulating layers 583, 584, and 585 which are stackedover the TFT 581; an electrode 587 which is in contact with a sourceelectrode or a drain electrode of the TFT 581 through an openingprovided in the insulating layers 583 to 585; and an electrode 588provided on a substrate 596. In addition, the electronic paper includes,between the electrode 587 and the electrode 588 on the substrate 596,spherical particles 589 each of which includes a black region 590 a, awhite region 590 b, and a cavity 594 filled with a liquid whichsurrounds the black region 590 a and the white region 590 b; and afiller 595 provided around the spherical particles 589.

The TFT 581 is a highly reliable TFT including an oxide semiconductorlayer as a semiconductor layer. For example, the TFT 581 can bemanufactured in a manner similar to the transistors in the aboveembodiments.

A method in which the spherical particles 589 are used is called atwisting ball display method. In the twisting ball display method,spherical particles each colored in black and white are arranged betweena first electrode and a second electrode for a display element, and apotential difference is generated between the first electrode and thesecond electrode to control orientation of the spherical particles, sothat display is performed.

Further, instead of the spherical element, an electrophoretic elementcan also be used. A microcapsule having a diameter of about 10 μm to 200μm in which transparent liquid, positively charged white microparticles,and negatively charged black microparticles are encapsulated, is used.In the microcapsules which are provided between the first electrode andthe second electrode, when an electric field is applied by the firstelectrode and the second electrode, the white microparticles and theblack microparticles move to opposite sides from each other, so thatwhite or black can be displayed. A display element using this principleis an electrophoretic display element. The electrophoretic displayelement has higher reflectance than a liquid crystal display element,and thus, an auxiliary light is unnecessary, power consumption is low,and a display portion can be recognized in a dim environment. Inaddition, even when power is not supplied to the display portion, animage which has been displayed once can be maintained. Accordingly, adisplayed image can be stored even if a semiconductor device having adisplay function (which may be referred to simply as a display device ora semiconductor device provided with a display device) is distanced froman electric wave source.

The driver circuit described in Embodiment 2 or Embodiment 3 can be usedas a driver circuit in the electronic paper in this embodiment, forexample. Further, since a transistor including an oxide semiconductorlayer can also be used as a transistor in the display portion, thedriver circuit and the display portion can be provided over onesubstrate, for example.

The electronic paper can be used for any electronic devices fordisplaying information in all fields. For example, the electronic papercan be applied to an electronic book reader (an e-book reader), aposter, an advertisement in a vehicle such as a train, or a display on avariety of cards such as a credit card. FIG. 24 illustrates an exampleof the electronic devices. FIG. 24 illustrates an example of anelectronic book reader.

As illustrated in FIG. 24, the electronic book reader 2700 includes twohousings, a housing 2701 and a housing 2703. The housing 2701 and thehousing 2703 are combined with a hinge 2711 so that the electronic bookreader 2700 can be opened and closed along the hinge 2711. With such astructure, the electronic book reader 2700 can be handled like a paperbook.

A display portion 2705 and a display portion 2707 are incorporated inthe housing 2701 and the housing 2703, respectively. The display portion2705 and the display portion 2707 may display one image or differentimages. In the case where the display portion 2705 and the displayportion 2707 display different images, for example, a display portion onthe right (the display portion 2705 in FIG. 24) can display text and adisplay portion on the left (the display portion 2707 in FIG. 24) candisplay an image.

FIG. 24 illustrates an example in which the housing 2701 is providedwith an operation portion and the like. For example, the housing 2701 isprovided with a power supply switch 2721, operation keys 2723, a speaker2725, and the like. Pages can be turned with the operation keys 2723.Note that a keyboard, a pointing device, and the like may be provided onthe same surface as the display portion of the housing. Moreover, anexternal connection terminal (an earphone terminal, a USB terminal, aterminal connectable to a variety of cables such as an AC adapter or aUSB cable), a storage medium insertion portion, and the like may beprovided on the back surface or the side surface of the housing.Moreover, the electronic book reader 2700 may have a function of anelectronic dictionary.

The electronic book reader 2700 may be configured to wirelessly transmitand receive data. Through wireless communication, desired book data orthe like can be purchased and downloaded from an electronic book server.

Embodiment 10

In this embodiment, a system-on-panel display device will be describedas one embodiment of the display device in Embodiment 6.

The logic circuit which is one embodiment of the present inventiondisclosed in this specification can be applied to a system-on-paneldisplay device in which a display portion and a driver circuit areprovided over one substrate. A specific structure of the display devicewill be described below.

The display device includes a display element in this embodiment.Examples of the display element include a liquid crystal element (alsoreferred to as a liquid crystal display element) and a light-emittingelement (also referred to as a light-emitting display element). Thelight-emitting element includes an element whose luminance is controlledby current or voltage in its category, and specifically includes aninorganic electroluminescent (EL) element, an organic EL element, andthe like in its category. Furthermore, the display device may include adisplay medium whose contrast is changed by an electric effect, such aselectronic ink.

In addition, the display device in this embodiment includes a panel inwhich the display element is sealed, and a module in which an IC and thelike including a controller are mounted on the panel. Furthermore, anelement substrate, which is one embodiment before the display element iscompleted in a manufacturing process of the display device, is providedwith a means for supplying current to the display element in each of aplurality of pixels. Specifically, the element substrate may be in astate in which only a pixel electrode of the display element is formed,a state in which a conductive film to be a pixel electrode is formed butis not etched yet to form the pixel electrode, or any other states.

Note that a display device in this specification refers to an imagedisplay device or a light source (including a lighting device). Further,the display device also includes a module provided with a connector inits category. For example, the display device includes a module to whicha flexible printed circuit (FPC), a tape automated bonding (TAB) tape,or a tape carrier package (TCP) is attached; a module having a TAB tapeor a TCP at the end of which is provided with a printed wiring board;and a module having an integrated circuit (IC) which is directly mountedon a display element by a chip on glass (COG) method.

Next, the appearance and cross section of a liquid crystal display panelwhich is one embodiment of the display device in this embodiment will bedescribed with reference to FIGS. 25A1 to 25B.

Each of FIGS. 25A1 and 25A2 is a top view of the display device in thisembodiment, in which a liquid crystal element 4013 and TFTs 4010, 4011,and 4113 over a first substrate 4001 are sealed between the firstsubstrate 4001 and a second substrate 4006 with a sealant 4005. The TFTs4010, 4011, and 4113 include the In—Ga—Zn—O-based film shown inEmbodiment 4 as a semiconductor layer. FIG. 25B is a cross-sectionalview taken along line M-N in FIGS. 25A1 and 25A2.

In the display device in this embodiment, the sealant 4005 is providedso as to surround a pixel portion 4002 and a scan line driver circuit4004 which are provided over the first substrate 4001. The secondsubstrate 4006 is provided over the pixel portion 4002 and the scan linedriver circuit 4004. Consequently, the pixel portion 4002 and the scanline driver circuit 4004 are sealed together with a liquid crystal layer4008, by the first substrate 4001, the sealant 4005, and the secondsubstrate 4006. A signal line driver circuit 4003 that is formed using asingle crystal semiconductor film or a polycrystalline semiconductorfilm over a substrate separately prepared is mounted in a region that isdifferent from the region surrounded by the sealant 4005 over the firstsubstrate 4001.

Note that there is no particular limitation on the connection method ofthe driver circuit which is separately formed, and a COG method, a wirebonding method, a TAB method, or the like can be used. FIG. 25A1illustrates an example in which the signal line driver circuit 4003 ismounted by a COG method. FIG. 25A2 illustrates an example in which thesignal line driver circuit 4003 is mounted by a TAB method.

The pixel portion 4002 and the scan line driver circuit 4004 providedover the first substrate 4001 include a plurality of TFTs. FIG. 25Billustrates the TFT 4010 included in the pixel portion 4002 and the TFTs4011 and 4113 included in the scan line driver circuit 4004, as anexample. Insulating layers 4020, 4021, and 4042 are provided over theTFTs 4010, 4011, and 4113. Further, a conductive layer 4040 is providedover the TFT 4011 with the insulating layers 4020 and 4042 interposedtherebetween. The conductive layer 4040 serves as a second gateelectrode.

As the TFTs 4010, 4011, and 4113, any of the TFT including an oxidesemiconductor layer as a semiconductor layer which are described in theabove embodiments can be employed. In this embodiment, the TFTs 4010,4011, and 4113 are n-channel TFTs.

A pixel electrode 4030 included in the liquid crystal element 4013 iselectrically connected to the TFT 4010. A counter electrode 4031 of theliquid crystal element 4013 is formed on the second substrate 4006. Aportion where the pixel electrode 4030, the counter electrode 4031, andthe liquid crystal layer 4008 overlap with one another corresponds tothe liquid crystal element 4013. Note that the pixel electrode 4030 andthe counter electrode 4031 are provided with an insulating layer 4032and an insulating layer 4033 functioning as alignment films,respectively, and the liquid crystal layer 4008 is sandwiched betweenthe pixel electrode 4030 and the counter electrode 4031 with theinsulating layers 4032 and 4033 therebetween.

To the first substrate 4001 and the second substrate 4006, a materialand a manufacturing method which can be used for the substrate 201 inthe above embodiments can be applied.

A spacer 4035 is a columnar partition which is obtained by selectiveetching of an insulating film and is provided in order to control thedistance (a cell gap) between the pixel electrode 4030 and the counterelectrode 4031. Alternatively, a spherical spacer may be used. Thecounter electrode 4031 is electrically connected to a common potentialline formed over the substrate where the TFT 4010 is formed. The counterelectrode 4031 and the common potential line can be electricallyconnected to each other via conductive particles arranged between a pairof substrates using the common connection portion. Note that theconductive particles are included in the sealant 4005.

Note that although this embodiment shows an example of a transmissiveliquid crystal display device, the present invention can also be appliedto a reflective liquid crystal display device or a transflective liquidcrystal display device.

Although, a polarizing plate is provided on the outer surface of thesubstrate (on the viewer side) and a coloring layer and an electrodeused for a display element are sequentially provided on the innersurface of the substrate in the example of the liquid crystal displaydevice in this embodiment, the polarizing plate may be provided on theinner surface of the substrate. The stacked-layer structure of thepolarizing plate and the coloring layer is not limited to the structurein this embodiment and may be set as appropriate depending on materialsof the polarizing plate and the coloring layer or conditions of themanufacturing process. Further, a light-blocking film serving as a blackmatrix may be provided.

In this embodiment, in order to reduce surface unevenness caused by theTFTs and to improve the reliability of the TFTs, the TFTs are coveredwith the insulating layers (the insulating layers 4020, 4021, and 4042)serving as a protective layer or a planarization insulating film. Notethat the protective layer prevents penetration of contaminatingimpurities such as an organic matter, metal, or moisture included inair, and thus a dense film is preferable as the protective layer. Theprotective layer may be formed by a sputtering method with a singlelayer or a stack of any of a silicon oxide film, a silicon nitride film,a silicon oxynitride film, a silicon nitride oxide film, an aluminumoxide film, an aluminum nitride film, an aluminum oxynitride film, or analuminum nitride oxide film. Although the protective layer is formed bya sputtering method in this embodiment, the method is not particularlylimited and may be selected from a variety of methods. Further, when anon-reducible film is used, the protective layer can also serve as areduction prevention layer.

Here, an insulating layer having a stacked-layer structure is formed asthe protective layer and a silicon oxide film is formed as theinsulating layer 4042, which is a first layer of the protective layer,by a sputtering method. The use of the silicon oxide film as theprotective layer is effective in preventing hillocks of an aluminum filmused as a source electrode and a drain electrode.

As a second layer of the protective layer, a silicon nitride film isformed by a sputtering method to provide the insulating layer 4020. Theuse of the silicon nitride film as the protective layer can preventmobile ions such as sodium from entering the semiconductor region andchanging electric characteristics of the TFT.

After the formation of the protective layer, the semiconductor layer maybe subjected to heat treatment.

The insulating layer 4021 is formed as the planarizing insulating film.The insulating layer 4021 can be formed using a heat-resistant organicmaterial such as polyimide, acrylic, polyimide amide, benzocyclobutene,polyamide, or epoxy can be used. As an alternative to such organicmaterials, it is possible to use a low-dielectric constant material (alow-k material), a siloxane-based resin, phosphosilicate glass (PSG),borophosphosilicate glass (BPSG), or the like. Note that the insulatinglayer 4021 may be formed by stacking a plurality of insulating filmsformed of any of these materials.

There is no particular limitation on the method of forming theinsulating layer 4021. Depending on the material, the insulating layer4021 can be formed by a method such as sputtering method, an SOG method,a spin coating method, a dipping method, a spray coating method, or adroplet discharge method (e.g., an ink jetting method, screen printing,or offset printing), or by using a tool (apparatus) such as a doctorknife, a roll coater, a curtain coater, a knife coater, or the like.When the insulating layer 4021 is formed using material solution, thesemiconductor layer may be annealed at the same time of a baking step.When the baking step of the insulating layer 4021 and the annealing ofthe semiconductor layer are combined, a display device can bemanufactured efficiently.

For the pixel electrode 4030 and the counter electrode 4031, alight-transmitting conductive material such as indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium tin oxide (hereinafter, referred to as ITO), indium zincoxide, or indium tin oxide to which silicon oxide is added, can be used.

Alternatively, a conductive composition including a conductive highmolecule (also referred to as a conductive polymer) can be used for thepixel electrode 4030 and the counter electrode 4031. The pixel electrodeformed using the conductive composition preferably has a sheetresistance of 10000 ohms per square or less and a light transmittance of70% or more at a wavelength of 550 nm. Further, the resistivity of theconductive high molecule included in the conductive composition ispreferably 0.1 Ω·cm or less.

As the conductive high molecule, a so-called it-electron conjugatedconductive polymer can be used. For example, polyaniline or a derivativethereof, polypyrrole or a derivative thereof, polythiophene or aderivative thereof, or a copolymer of two or more of these materials canbe given.

Further, a variety of signals and potentials are supplied to the signalline driver circuit 4003 which is separately formed, the scan linedriver circuit 4004, or the pixel portion 4002 from an FPC 4018.

In this embodiment, a connection terminal electrode 4015 is formed usingthe same conductive film as the pixel electrode 4030 included in theliquid crystal element 4013, and a terminal electrode 4016 is formedusing the same conductive film as source and drain electrode layers ofthe TFTs 4011 and 4010.

The connection terminal electrode 4015 is electrically connected to aterminal included in the FPC 4018 via an anisotropic conductive film4019.

Note that FIGS. 25A1, 25A2, and 25B illustrate the example in which thesignal line driver circuit 4003 is formed separately and mounted on thefirst substrate 4001; however, this embodiment is not limited to thisstructure. The scan line driver circuit may be separately formed andthen mounted, or only a part of the signal line driver circuits or apart of the scan line driver circuits may be separately formed and thenmounted.

As described above, a system-on-panel display device can be formed. Forthe display device in this embodiment, the logic circuit in the aboveembodiments can be used in the driver circuit, for example, and thelogic circuit can be formed in the same process as the TFT in thedisplay portion.

Note that this embodiment can be combined as appropriate with any of thestructures described in other embodiments.

Embodiment 11

The semiconductor device in Embodiment 6 to Embodiment 10 can be appliedto a variety of electronic devices (including game machines). Examplesof such electronic devices are a television device (also referred to asa television or a television receiver), a monitor of a computer or thelike, a camera such as a digital camera or a digital video camera, adigital photo frame, a mobile phone handset (also referred to as amobile phone or a mobile phone device), a portable game console, aportable information terminal, an audio playback device, a large-sizedgame machine such as a pinball machine, and the like.

FIG. 26A illustrates an example of a television device. In thetelevision device 9600, a display portion 9603 is incorporated in ahousing 9601. The display portion 9603 can display images. Here, thehousing 9601 is supported by a stand 9605.

The television device 9600 can be operated with an operation switch ofthe housing 9601 or a separate remote control 9610. Channels can beswitched and volume can be controlled with operation keys 9609 of theremote control 9610, whereby an image displayed on the display portion9603 can be controlled. Moreover, the remote control 9610 may beprovided with a display portion 9607 for displaying data output from theremote control 9610.

Note that the television device 9600 is provided with a receiver, amodem, and the like. With the receiver, general TV broadcasts can bereceived. Moreover, when the display device is connected to acommunication network with or without wires via the modem, one-way (froma sender to a receiver) or two-way (e.g., between a sender and areceiver or between receivers) information communication can beperformed.

FIG. 26B illustrates an example of a digital photo frame 9700. Forexample, in the digital photo frame 9700, a display portion 9703 isincorporated in a housing 9701. The display portion 9703 can display avariety of images. For example, the display portion 9703 can displayimage data taken with a digital camera or the like and function as anormal photo frame.

Note that the digital photo frame 9700 is provided with an operationportion, an external connection terminal (a USB terminal, a terminalconnectable to a variety of cables such as a USB cable), a storagemedium insertion portion, and the like. Although these components may beprovided on the same surface as the display portion, it is preferable toprovide them on the side surface or the back surface for designaesthetics. For example, a storage medium storing image data taken witha digital camera is inserted into the storage medium insertion portionof the digital photo frame 9700 and the data is loaded, whereby theimage can be displayed on the display portion 9703.

The digital photo frame 9700 may be configured to transmit and receivedata wirelessly. Through wireless communication, desired image data canbe loaded to be displayed.

FIG. 27A illustrates a portable game console including two housings, ahousing 9881 and a housing 9891 which are jointed with a joint portion9893 so that the portable game console can be opened or folded. Adisplay portion 9882 and a display portion 9883 are incorporated in thehousing 9881 and the housing 9891, respectively. In addition, theportable game console illustrated in FIG. 27A is provided with a speakerportion 9884, a storage medium insertion portion 9886, an LED lamp 9890,input means (operation keys 9885, a connection terminal 9887, a sensor9888 (having a function of measuring force, displacement, position,speed, acceleration, angular velocity, rotation number, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radial ray,flow rate, humidity, gradient, vibration, smell, or infrared ray), and amicrophone 9889), and the like. Needless to say, the structure of theportable game console is not limited to the above and another structurewhich is provided with at least a display device can be employed. Theportable game console may include an additional accessory asappropriate. The portable game console illustrated in FIG. 27A has afunction of reading a program or data stored in a storage medium todisplay it on the display portion, and a function of sharing data withanother portable game console via wireless communication. Note that afunction of the portable game console illustrated in FIG. 27A is notlimited to those described above, and the portable game console can havea variety of functions.

FIG. 27B illustrates an example of a slot machine which is a large-sizedgame machine. In the slot machine 9900, a display portion 9903 isincorporated in a housing 9901. In addition, the slot machine 9900includes an operation means such as a start lever or a stop switch, acoin slot, a speaker, and the like. Needless to say, the structure ofthe slot machine 9900 is not limited to the above and another structurewhich is provided with at least the display device according to thepresent invention may be employed. The slot machine 9900 may include anadditional accessory as appropriate.

FIG. 28A illustrates an example of a cellular phone. The cellular phone9000 includes a housing 9001 in which a display portion 9002 isincorporated, an operation button 9003, an external connection port9004, a speaker 9005, a microphone 9006, and the like.

Information can be input to the cellular phone 9000 illustrated in FIG.28A by touching the display portion 9002 with a finger or the like.Moreover, users can make a call or write an e-mail by touching thedisplay portion 9002 with their fingers or the like.

There are mainly three screen modes of the display portion 9002. Thefirst mode is a display mode mainly for displaying images. The secondmode is an input mode mainly for inputting information such as text. Thethird mode is a display-and-input mode in which two modes of the displaymode and the input mode are combined.

For example, in the case of making a call or writing an e-mail, thedisplay portion 9002 may be placed into a text input mode mainly forinputting text, and characters displayed on a screen can be input. Inthis case, it is preferable to display a keyboard or number buttons onalmost the entire area of the screen of the display portion 9002.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside thecellular phone 9000, display on the screen of the display portion 9002can be automatically switched by detecting the direction of the cellularphone 9000 (whether the cellular phone 9000 is placed horizontally orvertically for a landscape mode or a portrait mode).

Further, the screen modes are switched by touching the display portion9002 or operating the operation button 9003 of the housing 9001.Alternatively, the screen modes can be switched depending on the kindsof image displayed on the display portion 9002. For example, when asignal for an image displayed on the display portion is data of movingimages, the screen mode is switched to the display mode. When the signalis text data, the screen mode is switched to the input mode.

Further, in the input mode, a signal is detected by an optical sensor inthe display portion 9002 and if input by touching the display portion9002 is not performed for a certain period, the screen mode may becontrolled so as to be switched from the input mode to the display mode.

The display portion 9002 can also function as an image sensor. Forexample, an image of a palm print, a fingerprint, or the like is takenby touching the display portion 9002 with the palm or the finger,whereby personal authentication can be performed. Moreover, when abacklight or sensing light source which emits near-infrared light isprovided in the display portion, an image of finger veins, palm veins,or the like can be taken.

FIG. 28B illustrates another example of a cellular phone. The cellularphone in FIG. 28B has a display device 9410 provided with a housing 9411including a display portion 9412 and operation buttons 9413, and acommunication device 9400 provided with a housing 9401 includingoperation buttons 9402, an external input terminal 9403, a microphone9404, a speaker 9405, and a light-emitting portion 9406 that emits lightwhen a phone call is received. The display device 9410 which has adisplay function can be detachably attached to the communication device9400 which has a phone function in two directions represented by thearrows. Thus, the display device 9410 and the communication device 9400can be attached to each other along their short sides or long sides. Inaddition, when only the display function is needed, the display device9410 can be detached from the communication device 9400 and used alone.Images or input information can be transmitted or received by wirelessor wire communication between the communication device 9400 and thedisplay device 9410, each of which has a rechargeable battery.

Note that this embodiment can be implemented in appropriate combinationwith any of the structures described in the other embodiments.

Embodiment 12

In this embodiment, a logic circuit including a transistor having astructure different from that in the above embodiment will be described.

Transistors in a display device which is one embodiment of the presentinvention are not limited to the transistors having the structureillustrated in FIGS. 2A and 2B and transistors having another structuremay be used. A logic circuit to which a transistor having anotherstructure is applied will be described with reference to FIGS. 29A and29B. FIGS. 29A and 29B illustrate a structure of a driver circuitportion in this embodiment. FIG. 29A is a top view and FIG. 29B is across-sectional view taken along line Z1-Z2 and line Z3-Z4 of the drivercircuit portion illustrated in FIG. 29A. Note that in the logic circuitillustrated in FIGS. 29A and 29B, the description of the logic circuitillustrated in FIGS. 2A and 2B can be employed for the description ofthe same components as the display device illustrated in FIGS. 2A and2B.

The logic circuit illustrated in FIGS. 29A and 29B includes thetransistor 251, the transistor 252, and the transistor 253, like thelogic circuit illustrated in FIGS. 2A and 2B.

Further, structures of the transistors will be described. The transistor251 includes the gate electrode 211 a over the substrate 201, the gateinsulating layer 202 over the gate electrode 211 a, the conductive layer215 a and the conductive layer 215 b over the gate insulating layer 202,and the oxide semiconductor layer 223 a over the gate electrode 211 awith the gate insulating layer 202 interposed therebetween and over theconductive layer 215 a and the conductive layer 215 b.

The transistor 252 includes the gate electrode 211 b over the substrate201, the gate insulating layer 202 over the gate electrode 211 b, theconductive layer 215 b and the conductive layer 215 c over the gateinsulating layer 202, and the oxide semiconductor layer 223 b over thegate electrode 211 b with the gate insulating layer 202 interposedtherebetween and over the conductive layer 215 b and the conductivelayer 215 c.

The transistor 253 includes the gate electrode 211 c over the substrate201, the gate insulating layer 202 over the gate electrode 211 c, theconductive layer 215 b and the conductive layer 215 d over the gateinsulating layer 202, and the oxide semiconductor layer 223 c over thegate electrode 211 c with the gate insulating layer 202 interposedtherebetween and over the conductive layer 215 b and the conductivelayer 215 d.

Each of the conductive layers 215 a to 215 d serves as a sourceelectrode or a drain electrode.

The oxide semiconductor layers 223 a to 223 c are subjected todehydration or dehydrogenation and the oxide insulating layer 207 isformed in contact with the oxide semiconductor layers 223 a to 223 c. Atransistor including such an oxide semiconductor layer, which undergoesdehydration or dehydrogenation and then brought into contact with theoxide insulating layer 207 formed thereon, as a channel formation layerhas high reliability because a V-th shift due to a long-term use or highload hardly occurs.

Further, in the driver circuit portion illustrated in FIGS. 29A and 29B,a planarizing insulating layer 216 is provided over the oxide insulatinglayer 207. In addition, a conductive layer 217 a is provided over theoxide semiconductor layer 223 a with the oxide insulating layer 207 andthe planarizing insulating layer 216 interposed therebetween, aconductive layer 217 b is provided over the oxide semiconductor layer223 b with the oxide insulating layer 207 and the planarizing insulatinglayer 216 interposed therebetween, and a conductive layer 217 c isprovided over the oxide semiconductor layer 223 c with the oxideinsulating layer 207 and the planarizing insulating layer 216 interposedtherebetween. Each of the conductive layers 217 a to 217 c serves as asecond gate electrode. The second gate voltage is applied to theconductive layers 217 a to 217 c, whereby the threshold voltage of thetransistors 251 to 253 can be controlled.

The transistors 251 to 253 illustrated in FIGS. 29A and 29B arebottom-contact transistors. When a bottom-contact transistor is used,the area where the oxide semiconductor layer and the conductive layerswhich serve as the source electrode and the drain electrode are incontact with each other can be increased, whereby peeling or the likecan be prevented.

Note that oxide conductive layers can be provided between the oxidesemiconductor layer and the conductive layers which serve as the sourceelectrode and the drain electrode as in the driver circuit portionillustrated in FIG. 4.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

Embodiment 13

In this embodiment, a logic circuit including a transistor having astructure different from that in the above embodiment will be described.

Transistors in a display device which is one embodiment of the presentinvention are not limited to the transistors having the structureillustrated in FIG. 2 and transistors having another structure may beused. A logic circuit to which a transistor having another structure isapplied will be described with reference to FIGS. 30A and 30B. FIGS. 30Aand 30B illustrate a structure of a driver circuit portion in thisembodiment. FIG. 30A is a top view and FIG. 30B is a cross-sectionalview taken along line Z1-Z2 and line Z3-Z4 of the driver circuit portionillustrated in FIG. 7A. Note that in the logic circuit illustrated inFIGS. 30A and 30B, the description of the logic circuit illustrated inFIGS. 2A and 2B can be employed for the description of the samecomponents in the display device illustrated in FIGS. 2A and 2B.

The logic circuit illustrated in FIGS. 30A and 30B include thetransistor 251, the transistor 252, and the transistor 253, like thelogic circuit illustrated in FIGS. 2A and 2B.

Further, structures of the transistors will be described. The transistor251 includes the gate electrode 211 a over the substrate 201, the gateinsulating layer 202 over the gate electrode 211 a, the conductive layer215 a and the conductive layer 215 b over the gate insulating layer 202,the oxide semiconductor layer 243 a over the gate electrode 211 a withthe gate insulating layer 202 interposed therebetween and over theconductive layer 215 a and the conductive layer 215 b, and the oxidesemiconductor layer 263 a over the oxide semiconductor layer 243 a.

The transistor 252 includes the gate electrode 211 b over the substrate201, the gate insulating layer 202 over the gate electrode 211 b, theconductive layer 215 b and the conductive layer 215 c over the gateinsulating layer 202, and the oxide semiconductor layer 2636 over thegate electrode 211 b with the gate insulating layer 202 interposedtherebetween and over the conductive layer 215 b and the conductivelayer 215 c.

The transistor 253 includes the gate electrode 211 c over the substrate201, the gate insulating layer 202 over the gate electrode 211 c, theconductive layer 215 b and the conductive layer 215 d over the gateinsulating layer 202, the oxide semiconductor layer 243 b over the gateelectrode 211 c with the gate insulating layer 202 interposedtherebetween and over the conductive layer 215 b and he conductive layer215 d, and the oxide semiconductor layer 263 c over the oxidesemiconductor layer 243 b.

Each of the conductive layers 215 a to 215 d serves as a sourceelectrode or a drain electrode.

The thickness of the oxide semiconductor layer (a stack of the oxidesemiconductor layer 243 a and the oxide semiconductor layer 263 a) inthe transistor 251 is larger than the thickness of the oxidesemiconductor layer (the oxide semiconductor layer 263 b) in thetransistor 252. In addition, the thickness of the oxide semiconductorlayer (a stack of the oxide semiconductor layer 243 b and the oxidesemiconductor layer 263 c) in the transistor 253 is larger than thethickness of the oxide semiconductor layer (the oxide semiconductorlayer 263 b) in the transistor 252. As the thickness of the oxidesemiconductor layer increases, the absolute value of a negative voltagefor a gate electrode which is needed to fully deplete the oxidesemiconductor layer increases. As a result, a transistor including athick oxide semiconductor layer as a channel formation layer behaves asa depletion type transistor.

The transistors 251 to 253 illustrated in FIGS. 30A and 30B arebottom-contact transistors. When a bottom-contact transistor is used,the area where the oxide semiconductor layer and the conductive layerswhich serve as the source electrode and the drain electrode are incontact with each other can be increased, whereby peeling or the likecan be prevented.

Note that oxide conductive layers may be provided between the oxidesemiconductor layer and the conductive layers which serve as the sourceelectrode and the drain electrode as in the driver circuit portionillustrated in FIG. 8.

Note that this embodiment can be combined as appropriate with any of theother embodiments.

This application is based on Japanese Patent Application serial no.2009-218931 filed with Japan Patent Office on Sep. 24, 2009, the entirecontents of which are hereby incorporated by reference.

1. A display device comprising: a driver circuit including a logiccircuit, the logic circuit including a first transistor which is adepletion type transistor and a second transistor which is anenhancement type transistor; a signal line; a pixel portion including apixel whose display state is configured to be controlled by input of asignal including image data from the driver circuit through the signalline; and a third transistor which is a depletion type transistor andincludes a gate, a source, and a drain, wherein one of the source andthe drain of the third transistor is configured to be supplied with areference voltage, wherein the other of the source and the drain of thethird transistor is electrically connected to the signal line, andwherein the gate of the third transistor is configured to be suppliedwith a gate signal, wherein the first to third transistors each includean oxide semiconductor layer including a channel formation region. 2.The display device according to claim 1, wherein the first to thirdtransistors each include: a gate electrode; a gate insulating layer overthe gate electrode; the oxide semiconductor layer over the gateinsulating layer; and a first conductive layer and a second conductivelayer over parts of the oxide semiconductor layer, the first conductivelayer and the second conductive layer each serving as a source electrodeor a drain electrode, and wherein the display device further comprisesan oxide insulating layer over the oxide semiconductor layer, the firstconductive layer, and the second conductive layer.
 3. A display devicecomprising: a driver circuit including a logic circuit, the logiccircuit including a first transistor which is a depletion typetransistor and a second transistor which is an enhancement typetransistor; a signal line; a pixel portion including a pixel whosedisplay state is configured to be controlled by input of a signalincluding image data from the driver circuit through the signal line;and a third transistor which is a depletion type transistor and includesa gate, a source, and a drain, wherein one of the source and the drainof the third transistor is configured to be supplied with a referencevoltage, wherein the other of the source and the drain of the thirdtransistor is electrically connected to the signal line, and wherein thegate of the third transistor is configured to be supplied with a gatesignal, wherein the first to third transistors each include an oxidesemiconductor layer including a channel formation region, wherein athickness of the oxide semiconductor layer in the first transistor islarger than a thickness of the oxide semiconductor layer in the secondtransistor, and wherein a thickness of the oxide semiconductor layer inthe third transistor is larger than a thickness of the oxidesemiconductor layer in the second transistor.
 4. The display deviceaccording to claim 3, wherein the first to third transistors eachinclude: a gate electrode; a gate insulating layer over the gateelectrode; the oxide semiconductor layer over the gate insulating layer;and a first conductive layer and a second conductive layer over parts ofthe oxide semiconductor layer, the first conductive layer and the secondconductive layer each serving as a source electrode or a drainelectrode, and wherein the display device further comprises an oxideinsulating layer over the oxide semiconductor layer, the firstconductive layer, and the second conductive layer.
 5. A display devicecomprising: a driver circuit including a logic circuit, the logiccircuit including a first transistor which is a depletion typetransistor and a second transistor which is an enhancement typetransistor; a signal line; a pixel portion including a pixel whosedisplay state is configured to be controlled by input of a signalincluding image data from the driver circuit through the signal line;and a third transistor which is a depletion type transistor and includesa gate, a source, and a drain, wherein one of the source and the drainof the third transistor is configured to be supplied with a referencevoltage, wherein the other of the source and the drain of the thirdtransistor is electrically connected to the signal line, and wherein thegate of the third transistor is configured to be supplied with a gatesignal, wherein the first to third transistors each include a first gateelectrode, a second gate electrode, and an oxide semiconductor layerincluding a channel formation region between the first gate electrodeand the second gate electrode.
 6. A display device comprising: a signalline; a pixel portion including a pixel, the pixel including a firsttransistor which is an enhancement type transistor and includes a gate,a source, and a drain; wherein one of the source and the drain of thefirst transistor is electrically connected to the signal line, a secondtransistor which is a depletion type transistor and includes a gate, asource, and a drain, wherein one of the source and the drain of thesecond transistor is configured to be supplied with a reference voltage,wherein the other of the source and the drain of the second transistoris electrically connected to the signal line, wherein the gate of thesecond transistor is configured to be supplied with a gate signal, andwherein the first transistor and the second transistor each include anoxide semiconductor layer including a channel formation region.